Laser Reflectance Interferometry System with a 405 Nm Laser Diode for in Situ Measurements of CVD Diamond Thickness

Kraszewski, Maciej; Bogdanowicz, Robert

doi:10.2478/mms-2013-0046

Cited by 8 publications

(4 citation statements)

References 18 publications

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“…The B/C ratio of samples was kept at 5000 ppm. The growth time of the polycrystalline film (see Table 1) was optimized to produce films of 400 ± 50 nm thickness [36]. The morphological studies were performed with a Hitachi S-3400N scanning electron microscope (SEM).…”

Section: Deposition Of Boron-doped Diamond Filmsmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

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A conductive boron-doped diamond (BDD) grown on a fused silica/quartz has been investigated. Diamond thin films were deposited by the microwave plasma enhanced chemical vapor deposition (MW PECVD). The main parameters of the BDD synthesis, i.e. the methane admixture and the substrate temperature were investigated in detail. Preliminary studies of optical properties were performed to qualify an optimal CVD synthesis and film parameters for optical sensing applications. The SEM micro-images showed the homogenous, continuous and polycrystalline surface morphology; the mean grain size was within the range of 100-250 nm. The fabricated conductive boron-doped diamond thin films displayed the resistivity below 500 mOhm cm -1 and the transmittance over 50% in the VIS-NIR wavelength range. The studies of optical constants were performed using the spectroscopic ellipsometry for the wavelength range between 260 and 820 nm. A detailed error analysis of the ellipsometric system and optical modelling estimation has been provided. The refractive index values at the 550 nm wavelength were high and varied between 2.24 and 2.35 depending on the percentage content of methane and the temperature of deposition.

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Section: Deposition Of Boron-doped Diamond Filmsmentioning

confidence: 99%

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Bogdanowicz¹

2014

Metrology and Measurement Systems

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“…Despite the data dispersion there is a clear increase in the growth rate confirmed by ex situ measurements. The growth rate is almost doubled within 4 h. Although the first oscillations are usually used in the literature to determine the growth rate [20,28,29], this result demonstrate that the effective growth rate is strongly evolving when this texture is forming.…”

Section: Roughness and Growth Ratementioning

confidence: 80%

“…The Laser Reflectance Interferometry (LRI) method is often used to follow etch/growth rate and optical constants of different materials [12][13][14][15][16]. It is particularly well-suited for diamond synthesis because of the low absorption of diamond in visible range [6,[17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Monitoring texture formation during diamond growth by specular and diffuse reflectance interferometry

Delfaure

Tranchant

Mazellier

et al. 2016

Diamond and Related Materials

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This paper is aimed at describing a sequential synthesis coupled to an extensive analysis in order to study the morphological evolution of a {100}{111} 100 textured diamond film. We compare several morphological parameters obtained by in situ optical methods and ex situ characterizations. The texture formation is found to be correlated with a significant increase in the growth rate of the film. In addition, morphology reconstruction of polycrystalline film is presented from which the R 100 covering ratio of {100} faces is extracted. As a result, a phenomenological model has been developed for real-time growth parameters extraction of the film based on in situ optical measurements.

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“…Example of such a method is the Levenberg-Marquadt algorithm [21,22], which is widely used in spectroscopic ellipsometry [22][23][24]. However, gradient descent methods are susceptible to local minima of MSE.…”

Section: B Application Of Optimization Algorithmsmentioning

confidence: 99%

Spectral measurement of birefringence using particle swarm optimization analysis

et al. 2014

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Measurement of birefringence is useful for the examination of technical and biological objects. One of the main problems, however, is that the polarization state of light in birefringent media changes periodically. Without knowledge of the period number, the birefringence of a given medium cannot be reliably determined. We propose to analyze the spectrum of light in order to determine the birefringence. We use a particle swarm optimization algorithm for an automatic processing spectra of light transmitted through birefringent material for two orthogonal states of polarization. We have tested the described algorithm on a liquid crystal cell with varying effective birefringence. The proposed method can be used for the measurement of uniaxial positive birefringence without knowing the number of retardation periods or an approximate value of the measurement result. This fact makes the proposed method useful for automatic measurements, when hundreds or thousands of spectra need to be analyzed.

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Laser Reflectance Interferometry System with a 405 Nm Laser Diode for in Situ Measurements of CVD Diamond Thickness

Cited by 8 publications

References 18 publications

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Characterization of Optical and Electrical Properties of Transparent Conductive Boron-Doped Diamond thin Films Grown on Fused Silica

Monitoring texture formation during diamond growth by specular and diffuse reflectance interferometry

Spectral measurement of birefringence using particle swarm optimization analysis

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