Laser Short-Pulse Effect on Thermodiffusion Waves of Fractional Heat Order for Excited Nonlocal Semiconductor

Abstract

In this work, the thermal effect of a laser pulse is taken into account when mechanical-thermodiffusion (METD) waves are studied. The nonlocal semiconductor material is used when interference between holes and electrons occurs. The fractional technique is applied on the heat equation according to the photo-thermoelasticity theory. The governing equations describe the photo-excitation processes according to the overlapping between the thermoelasticity and photothermal theories. The thermoelastic deformation (TD) and the electronic deformation (ED) for the dimensionless fields are taken in one dimension (1D). The Laplace transforms are applied to obtain the analytical solutions when some initial and boundary conditions are applied at the nonlocal surface. The complete nondimensional solutions of the main quantities are obtained according to some numerical simulation approximate during the inversion processes of Laplace transforms and Fourier expansion. The time-fractional order, nonlocal, and thermal memories are used to compare the wave propagations of the main fields and are discussed graphically for nonlocal silicon material.

A changeable thermal conductivity and optoelectronic-mechanical wave behavior in a microelongated, non-locally rotating semiconductor media

“…The arbitrary parameters may be assessed when certain boundary constraints are applied to the free non-local microelongated surface. The boundary conditions are selected at [45], and they may be introduced in the following ways:…”

“…On the other hand, Ref. [45] investigated the thermos-diffusion waves for nonlocal semiconductors utilizing the fractional calculus and the laser short-pulse effect. When the thermal conductivity is variable (depends on the heat), previous works on nonlocal semiconductors ignored the impact of micro-elongation parameters and rotating fields.…”

Thermomagnetic behavior of a semiconductor material heated by pulsed excitation based on the fourth-order MGT photothermal model

“…It is known that the rise-time of the picosecond laser pulses is related to both the pulse energy and the spot size, but it is also related to the maximum laser energy density at the silicon surface. The first set of graphs (1)(2)(3)(4)(5)(6) shows the effect of the laser pulse rise-time parameter v on the studied system variables versus location x for three different values of v equal to 0.1, 0.2, and 0.3. Boundary requirements are met for all physical quantities, and all curves coincide as x approaches infinity, as seen in the figures.…”

“…Semiconductors had extraordinary use across many sectors in the 20th century as a result of technological and industrial advancements including incorporating anything from medical equipment to electrical circuits and even solar cells that generate renewable energy. Researchers who worked on semiconductor implants realized that the internal systems of these substances may change with temperature, particularly when subjected to light or a laser beam [2]. Heat generation is a common side effect of irradiating a semiconductor with a powerful laser beam.…”

Magnetic Field Influence of Photo-Mechanical-Thermal Waves for Optically Excited Microelongated Semiconductor

“…Recently, the photothermal (PT) technique was established as an effective method to investigate the thermal and electronic properties of semiconductor materials. Semiconductors are materials that have recently been studied in depth because of their great importance in many modern industries such as sensors, solar cells, and advanced medical devices [1,2]. It is worth noting that most renewable energy production depends mainly on understanding the nature of semiconductors.…”