Laser Spectroscopic Detection of Radicals in the Photolysis of Disilane with an ArF Laser

Okada, Tatsuo; Nishimi, Akihiro; Shibamaru, Noboru; Maeda, Mitsuo

doi:10.1143/jjap.31.3707

Cited by 3 publications

(10 citation statements)

References 14 publications

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“…reported the quantum yield for SiH 3 formation to be 0.05 ± 0.05 . Okada et al reported that no signal due to SiH 3 radical has been detected using the REMPI method . The results obtained in the present study are consistent with these reported results.…”

Section: Resultssupporting

confidence: 92%

“…The quantum yield of SiH 4 formation has been estimated to be 0.1 by Chu et al There are three SiH 4 formation channels in the ground-state products as follows: Okada et al reported a quantum yield of ground-state Si( 3 P) atom formation of 0.01, from which the quantum yield of the SiH 4 + Si + H 2 channel is expected to be less than 0.01. Since the branching of reaction r12 is roughly expected to be 0.09 on the basis of the H atom yield, the sum of branching of reactions r8 and r12 is approximately equal to 0.1.…”

Section: Discussionmentioning

confidence: 99%

“…Understanding the gas-phase photochemistry of Si 2 H 6 is critical to clarify the mechanism of Si thin film growth in LCVD. Thus, the photodissociation processes of Si 2 H 6 at 193 nm have been studied extensively by various experimental techniques. − In 193 nm photolysis of Si 2 H 6 , 21 dissociation pathways are energetically possible since one 193 nm photon (148 kcal/mol) provides enough energy to break any single bond in Si 2 H 6 and numerous combinations of bonds, as summarized in Table .…”

Section: Introductionmentioning

confidence: 99%

“…Chu et al determined the total quantum yield for loss of Si 2 H 6 and the quantum yield for the formation of SiH 4 by using time-resolved infrared diode laser absorption spectroscopy. Okada et al reported the quantum yield of Si atom formation by [2 + 1] resonance-enhanced multiphoton ionization (REMPI) and detection of Si 2 and SiH radicals by laser-induced fluorescence (LIF) technique. It has been proposed that disilicon species such as H 3 SiSiH or H 2 SiSiH 2 produced by 193 nm photolysis of Si 2 H 6 may play a key role in the LCVD. ,, There are arguments with respect to the formation of SiH 2 in 193 nm photolysis of Si 2 H 6 .…”

Section: Introductionmentioning

confidence: 99%

“…It has been proposed that disilicon species such as H 3 SiSiH or H 2 SiSiH 2 produced by 193 nm photolysis of Si 2 H 6 may play a key role in the LCVD. ,, There are arguments with respect to the formation of SiH 2 in 193 nm photolysis of Si 2 H 6 . No SiH 2 has been detected by using intracavity laser spectroscopy 3 and LIF methods . On the other hand, 193 nm photolysis of Si 2 H 6 was used as a source of SiH 2 radical in the kinetics experiment …”

Section: Introductionmentioning

confidence: 99%

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Photolysis of Disilane at 193 nm

et al. 1999

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The primary photochemical process of Si2H6 at 193 nm has been studied by using time-resolved mass spectrometry and laser-induced fluorescence (LIF) techniques. Si2H2 was confirmed as a primary photoproduct, but no signal due to SiH3, Si2H3, Si2H4, and Si2H5 in 193 nm photolysis has been detected. SiH2 was observed in a pump-and-probe experiment by the LIF method, which rapidly reacts with the Si2H6 parent molecule to form Si3H8. The quantum yield of Si3H8 produced in the reaction of SiH2 + Si2H6 was estimated to be 0.13 ± 0.02 by using electron impact mass spectrometry. It was concluded that SiH2 produced by the photolysis exclusively reacted with Si2H6 and thus the quantum yield of SiH2 was equal to that of Si3H8, i.e., 0.13. The quantum yield of H atom was estimated to be 0.09 ± 0.01 by using vacuum ultraviolet (VUV) LIF. On the basis of the existing data and present results, it was suggested that the H2 molecule production channels are dominant in 193 nm photolysis of Si2H6.

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Section: Resultssupporting

confidence: 92%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photolysis of Disilane at 193 nm

et al. 1999

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Synthesis and Temperature-Dependence of Hydrogen-Terminated Silicon Clusters

2001

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A novel laser photolysis source has been used to synthesize hydrogen-terminated silicon clusters Si n H x + , where n e 50. Using mass spectrometry, the hydrogen content of the Si n H x + clusters with n ) 10-30 was measured as a function of temperature from 300 to 950 K. For n ) 10-22 at the lower temperatures, there is a broad distribution of [H]/[Si] ratios which peak around compositions expected for clusters with bulklike silicon cores (x/n > 1). Si n H x + clusters with x/n = 1 appear to be favored at intermediate temperatures. This stoichiometric composition suggests three-dimensional, Si n H n + cage-like structures built from Si-H units. The stability of the cage geometries is supported by density functional calculations. For cluster cations with n g 23 an abrupt transition occurs and there is a sharp drop in the hydrogen content at the lower temperatures. For these clusters, Si n H (n-y) + (y ) 1-5) compositions are prominent at the higher temperatures. These compositions suggest cage-like geometries with one or more internal silicon atoms. By adjusting the source conditions it is possible to generate Si n H x + (n g 23) clusters with a narrow distribution of x (less than two hydrogens wide).

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Laser-induced resonance fluorescence as a diagnostic technique in non-thermal equilibrium plasmas

Amorim

Baravian

Jolly

2000

J. Phys. D: Appl. Phys.

131

114

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Laser-induced fluorescence (LIF) techniques currently used as an optical diagnostic to study and characterize non-thermal equilibrium plasmas are reviewed. The general mechanisms occurring in one- or two-photon resonant absorption-induced fluorescence when used for the detection of species in their fundamental state are analysed. We emphasize the techniques based on the simultaneous absorption of two photons for the detection of light atoms and molecules and, particularly, two-photon absorption laser-induced fluorescence (TALIF) and derivative techniques, such as resonant enhanced multi-photo-ionization, two-photon absorption laser-induced stimulated emission (TALISE) and photo-fragment translational spectroscopy, in which molecules are photo-dissociated and the ejected atomic fragments are simultaneously detected by TALIF. The kinetics of one- and two-photon absorption are treated in detail including, for the latter, a modelling, which indicates the conditions of emergence of TALISE. The main calibration methods allowing one to obtain the absolute density of species detected by LIF and some examples of applications demonstrating the interest of these diagnostic techniques in plasma processing are presented.

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Laser Spectroscopic Detection of Radicals in the Photolysis of Disilane with an ArF Laser

Cited by 3 publications

References 14 publications

Photolysis of Disilane at 193 nm

Photolysis of Disilane at 193 nm

Synthesis and Temperature-Dependence of Hydrogen-Terminated Silicon Clusters

Laser-induced resonance fluorescence as a diagnostic technique in non-thermal equilibrium plasmas

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