Laser spectroscopy of crystalline semiconductors

Klingshirn, C.

doi:10.1007/3540501541_6

Cited by 5 publications

(1 citation statement)

References 140 publications

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“…(87-89) lead to a further renormalization of the electronic energies, screening of the interactions, and additional collision terms. The success of this theory to descibe numerous linear and nonlinear effects is obvious from Haug and Koch [14] and the contributions presented by Klingshirn [42] and Hvam [43] in this book. Recent studies by Stahl [44] and his collaborators indicate, however, that the SBE treatment becomes questionable for the tera-Hertz emission in a narrow band superlattice.…”

Section: Discussionmentioning

confidence: 93%

Dielectric Description of Semiconductors: From Maxwell— to Semiconductor Bloch—Equations

Baltz

NATO Science Series: B:

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A tutorial on the dielectric description of matter is presented with particular attention to semiconductor optics. The first part focuses on general concepts like the construction of macroscopic fields, linear and quadratic response, and simple models how to describe the reaction of matter with respect to the electromagnetic field. Beginning with the twolevel approximation of an atom, the second part will lead us to the semiconductor Bloch equations which are the today's standard model of semiconductor optics in the short time regime. Together with the Maxwell equations these form a closed set of dynamical equations for the electromagnetic field, polarization, and electron/hole population of a semiconductor upon optical excitations. Some selected applications and problems are added.

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Section: Discussionmentioning

confidence: 93%

Dielectric Description of Semiconductors: From Maxwell— to Semiconductor Bloch—Equations

Baltz

NATO Science Series: B:

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Excitonic Optical Nonlinearity in II‐VI MOCVD‐Grown Crystals

Zimin

Гапоненко

Malinovskii

et al. 1990

Physica Status Solidi (b)

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a), S. V. GAPONENKO (a), I. E. MALINOVSKII (a), V. Yu. LEBED (a), P. I. KUZNETSOV (b), G. G. YAKUSHCHEVA (b), and A. V. KUZNETSOV (c)Using the method of single-and two-beam laser spectroscopy, the nonlinear optical properties of high-quality MOCVD-grown ZnSe and CdSe samples are studied. At nitrogen temperatures the dominating mechanism of absorption nonlinearity is the plasma screening of excitons. Along with this, in the nonlinear response of ZnSe crystals the exciton-exciton interaction causing band broadening takes place. At room temperatures, in CdSe a strong dependence is revealed of absorption spectrum deformation on the exciting radiation quanta energy which is associated with slowing down of electron-hole plasma cooling.

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Excited States in Semiconductors

Klingshirn

1992

Optical Properties of Excited States in Solids

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Laser spectroscopy of crystalline semiconductors

Cited by 5 publications

References 140 publications

Dielectric Description of Semiconductors: From Maxwell— to Semiconductor Bloch—Equations

Dielectric Description of Semiconductors: From Maxwell— to Semiconductor Bloch—Equations

Excitonic Optical Nonlinearity in II‐VI MOCVD‐Grown Crystals

Excited States in Semiconductors

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