Laser synthesis of carbon-rich SiC nanoribbons

Abstract

A nanosecond pulsed laser direct-write and doping (LDWD) technique is used for the fabrication of carbon-rich silicon carbide nanoribbons heterostructure in a single crystal 4H–SiC wafer. Characterization by high-resolution transmission electron microscope and selected area electron diffraction pattern revealed the presence of nanosize crystalline ribbons with hexagonal graphite structure in the heat-affected zone below the decomposition temperature isotherm in the SiC epilayer. The nanoribbons exist in three layers each being approximately 50–60 nm thick, containing 15–17 individual sheets. The layers are self-aligned on the (0001) plane of the SiC epilayer with their c axis at 87° to the incident laser beam. The LDWD technique permits synthesis of heterostructured nanoribbons in a single step without additional material or catalyst, and effectively eliminates the need for nanostructure handling and transferring processes.

In situ growth of SiC nanowires on RS-SiC substrate(s)

“…In situ fabrication of the SiC nanowires in some designed substrates such as SiC or Al 2 O 3 might provide a solution to the nanomanipulation problem with an attendant reduction in the fabrication steps. Such an effort has been made in recent work by Salama et al [13], in which a laser direct-write process to fabricated carbon rich SiC nanoribbons in a 4H-SiC single crystal wafer was discussed. The proposed laser process enables the fabrication of nanoribbon-SiC heterostructures directly within the SiC wafer and thus eliminated the need for nanostructure transferring from one medium to another, although a graphite layer was also produced.…”

The influence of additive content on microstructure and mechanical properties on the Csf/SiC composites after annealed treatment

“…Verspui and Knippenherg [10] utilized lanthanum as catalyst to vaporize and form ␣-SiC whiskers on nucleation sites on the bulk SiC by the re-deposition technology, but the fabrication temperature was too high. Salama and Quick [11] fabricated rich-carbon SiC nano ribbons in a 4H-SiC single crystal wafer by a laser directwrite process. Yang et al [12] synthesized SiC nanowires in the RS-SiC plate by in situ chemical vapor growth process.…”

Adsorbing the magnetic superhalogen MnCl3 to realize intriguing half-metallic and spin-gapless-semiconducting behavior in zigzag or armchair SiC nanoribbon

“…[23][24][25][26] Experimentally, different polymorphs of SiC nanoribbons have been synthesized via several routes. [27][28][29][30][31] For example, via a catalyst-free route at a relatively low growth temperature, wurtzite-type SiC (2H-SiC) nanoribbons have been fabricated, 27 which are tens to hundreds of microns in length, a few microns in width and tens of nanometers in thickness. By a lithium-assisted synthetic route or the thermal evaporation approach, SiC (3C-SiC) nanoribbons have been obtained.…”