Lasers with δ InAs layers in GaAs

Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well

“…[1][2][3] Large lattice mismatch ͑ϳ6.8% ͒ between InAs and GaAs restricts twodimensional growth of InAs below 2 ML ͑ML denotes monolayer͒. 4 For a thickness larger than 2 ML, threedimensional self-assembled quantum dots are formed following the Stranski-Krastanov growth mode, which continues to be investigated in great depth.…”

“…7 Laser diodes showing high gain excitonic lasing with InAs ultrathin layers have already been demonstrated. [1][2][3] Apart from their use in diode lasers, InAs ultrathin layers are also used to modify the energy levels of GaAs QWs. 8 InAs/ GaAs ultrathin QWs have been studied by using several techniques such as PL, photoluminescence excitation, modulation spectroscopy, surface photovoltage spectroscopy, high resolution x-ray diffraction ͑HRXRD͒, and high resolution transmission electron microscopy.…”

Optical characterization of MOVPE grown δ‐InAs layers in GaAs

“…the emission bands of the MQW lasers based on InAs δ-layer in GaAs with increasing excitation and temperature [2]. Agreement between experiment and simulation also shows on good prediction capability of the applied theoretical model which can be further used for design and further optimization of ultrathin InAs layer structures in GaAs.…”

“…Embedding InAs δ-layers into the AlGaAs/GaAs waveguide as a laser active region gives an opportunity to produce highly efficient and reliable near infrared lasers. Recently, we reported lasers with different InAs δ-layer structures in AlGaAs/GaAs waveguide prepared by MetalOrganic Vapor Phase Epitaxy (MOVPE) lasing at different wavelenghts from 890 to 1100 nm with low threshold current density (up to 0.12 kA/cm 2 ) and high quantum efficiency (up to 35 %) [2,3]. Control of the growth and further optimization of these ultrathin InAs layer structures necessitates application of adequate diagnostic techniques capable to characterize them quickly and accurately.…”