Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy

Kouno, Tetsuya; Kishino, Katsumi; Sakai, Masaru

doi:10.1109/jqe.2011.2175369

Cited by 49 publications

(66 citation statements)

References 18 publications

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“…Previous studies on GaN and InGaN revealed that the lateral overgrowth i.e. disk formation occurs at low temperatures compare to the growth temperatures of nanowires [27,36,37]. In contrast, here, InN disks form at high temperature compared to regular InN nanowire growth temperature, which can be explained from the fundamental difference in decomposition and desorption temperature between InN and GaN.…”

Section: Resultscontrasting

confidence: 55%

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Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy

Sarwar

Yang

Esser

et al. 2016

Journal of Crystal Growth

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a b s t r a c t Self-assembly of hexagonal InN micro-mushrooms on Si (111) substrates by molecular beam epitaxy is reported. Scanning electron microscopy (SEM) reveals hexagonal mushroom caps with smooth top surfaces and a step-like morphology at the bottom surface. A detailed growth study along with SEM measurements reveals that an upside-down pendeoepitaxy mechanism underlies the formation of these structures. Cryogenic temperature photoluminescence measurements on the InN disks show a dominant band-to-acceptor recombination peak at 0.68 eV. Cross-section annular bright field (ABF-) scanning transmission electron microscopy (STEM) reveals that the growth of these structures occurs along the ½0001 crystallographic orientation (N-face). Plan-view high angle annular dark field (HAADF) STEM in the center of the micro-disks reveals a hexagonal lattice indicative of stacking faults. However, at the outskirt of the micro-disk, surprisingly, a honeycomb lattice is observed in plan view STEM indicating a perfect freestanding Wurtzite InN disk that is free of stacking faults. This result opens a pathway for realizing strain-free, freestanding InN substrates.

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Section: Resultscontrasting

confidence: 55%

“…The growth of GaN and InGaN disks on nanowires was previously observed using low temperature growth [27,36,37]. However, to the best of our knowledge, such structures are not previously reported for the case of InN.…”

Section: Introductionmentioning

confidence: 69%

Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy

Sarwar

Yang

Esser

et al. 2016

Journal of Crystal Growth

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“…Since the refractive index n ≈ 2 (n ≈ 2.35 in the ultraviolet) is larger, other orbits than the periodic-6 orbit are confined by total internal reflection, e.g., periodic-3 orbits with the shape of an equilateral triangle, which can lead to higher Q-factors (Kouno et al, 2011;Song et al, 2013a). The nanoneedles studied by Nobis Optically pumped WGM lasing action in hexagonal nano-and microresonators has been achieved for ZnO nanonails (Wang et al, 2006), ZnO nanodisks (Gargas et al, 2010), ZnO microwires (Czekalla et al, 2008), ZnO microneedles (Zhu et al, 2009), ZnO nanodisks (Yu et al, 2007), GaN microdisks (Kouno et al, 2011), and InGaAs nanopillars (Chen et al, 2011).…”

Section: A Polygonal Cavitymentioning

confidence: 99%

Dielectric microcavities: Model systems for wave chaos and non-Hermitian physics

2015

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“…12,13 There also are many other studies on GaN WGM microcavities based on self-assembled micro/ nano crystals using bottom-up methods, including microscale pyramids, hexagonal disks, and pillars. [14][15][16] However, it is difficult to achieve precise control over the locations, morphologies, dimensions, and uniformities of these microstructures during growth. 17 More importantly, in optical microcavities containing pairs of parallel mirror-like crystal facets, F-P modes will always coexist with WGMs.…”

mentioning

confidence: 99%

GaN hemispherical micro-cavities

Zhang

Cong

Wang

et al. 2016

Applied Physics Letters

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GaN-based micro-dome optical cavities supported on Si pedestals have been demonstrated by dry etching through gradually shrinking microspheres followed by wet-etch undercutting. Optically pumped whispering-gallery modes (WGMs) have been observed in the near-ultraviolet within the mushroom-like cavities, which do not support Fabry-Pérot resonances. The WGMs blue-shift monotonously as the excitation energies are around the lasing threshold. Concurrently, the mode-hopping effect is observed as the gain spectrum red-shifts under higher excitations. As the excitation energy density exceeds ∼15.1 mJ/cm2, amplified spontaneous emission followed by optical lasing is attained at room temperature, evident from a super-linear increase in emission intensity together with linewidth reduction to ∼0.7 nm for the dominant WGM. Optical behaviors within these WGM microcavities are further investigated using numerical computations and three-dimensional finite-difference time-domain simulations.

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Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy

Cited by 49 publications

References 18 publications

Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy

Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy

Dielectric microcavities: Model systems for wave chaos and non-Hermitian physics

GaN hemispherical micro-cavities

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