Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires

Abstract

Silicon-based gallium nitride lasers are considered potential laser sources for on-chip integration. However, the capability of on-demand lasing output with its reversible and wavelength tunability remains important. Herein, a Benz-shaped GaN cavity is designed and fabricated on a Si substrate and coupled to a Ni metal wire. Under optical pumping, excitation position-related lasing and exciton combination properties of pure GaN cavity are studied systematically. Under electrically driven, joule thermal of Ni metal wire makes it easy to change the temperature of the cavity. And then, we demonstrate a joule heat-induced contactless lasing mode manipulation in the coupled GaN cavity. The driven current, coupling distance, and excitation position influences the wavelength tunable effect. Compared with other positions, the outer ring position has the highest lasing properties and lasing mode tuning abilities. The optimized structures demonstrate clear wavelength tuning and an even mode switch. The thermal reduction of the band gap is identified to account for the modification of the lasing profile, but the thermo-optic effect is non-negligible under a high-driven current.

Visualizing Structural Defects at Hidden Interfaces of Micro-Optoelectronic Devices by Second Harmonic Generation Microscopy

“…Detailed etching parameters are provided in Figure S2b depicting a side-view SEM image of a microdisk after etching (Figures S1 and S2). − As illustrated in Figure a, scanning electron microscopy (SEM) images exhibit a uniform distribution of the floating arrays with intact individual structures. The inset provides an enlarged SEM image of a GaN/AlN microdisk within the white dashed region, revealing a smooth surface with a diameter of 13.3 μm and no observable structural defects.…”