Latch-up windows tests in high temperature range

Abstract

CMOS IC dose rate latch-up was investigated within 10 to 100°C temperature range with pulsed laser simulator and flash X-ray machme. Devices were latch-up free at room temperature while either permanent latch-up or latch-up windows were detected in the range above 40°C. The phenomenon analysis is performed. PC

Radiation Hard Devices Based on SiC

“…Such studies provided information on mechanisms of failures and threshold radiation doses, which bring about variations in the device characteristics and degradation of devices as well as confirmed the earlier data on high radiation hardness of SiC. More recently the development of SiC radiation detectors has seen a renewed interest due to the fabrication of high purity thick SiC epitaxial layers [10][11][12][13].…”

“…2). The transient radiation response of the SiC diodes demonstrated sufficient benefit as compared to Si devices, the reduction of ionizing current was in the range from 5 to 7 times under the same dose rate, related to both the lower carrier generation and carrier lifetime in SiC as compared with Si [12]. That indicates the hardness of SiC devices to the high dose rate effects.…”