Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

Zhang, A. P.; Johnson, J. W.; Ren, F.; Han, Jung; Polyakov, A. Y.; Smirnov, N. B.; Говорков, А. В.; Redwing, Joan M.; Lee, K. P.; Pearton, S. J.

doi:10.1063/1.1346622

Cited by 96 publications

(47 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Being stimulated by recent explosive success of nitride based lasers and light emitting diodes in blue and ultraviolet regions, electronic devices such as AlGaN/GaN heterostructure field effect transistors ͑HFETs͒, 1-3 high-power metalsemiconductor field effect transistors ͑MESFETs͒, 4 and power rectifiers 5 have also made remarkable progress in recent years, resulting in unprecedented high power performances in microwaves and millimeter wave regions. Many workers believe that the AlGaN/GaN HFET will become the key device in the next-generation high frequency power electronics.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hasegawa

Inagaki

Ootomo

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

213

148

View full text Add to dashboard Cite

In order to clarify the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor ͑HFET͒, detailed electrical properties of the ungated portion and Schottky-gated portion of the device were investigated separately, using a gateless HFET structure and an AlGaN Schottky diode structure. The gateless device was subjected to plasma treatments and surface passivation processes including our novel Al 2 O 3 -based surface passivation. dc I -V curves of gateless HFETs were highly nonlinear due to virtual gating by surface states. After drain stress, air-exposed, H 2 plasma-treated and SiO 2 -deposited gateless HFETs showed an initial large-amplitude exponential current transient followed by a subsequent smaller, slow, and highly nonexponential response. The former was explained by emission from deep donors at E c Ϫ0.37 eV, and the latter by emission from surface states. Capture transients with stress-dependent capture barriers were also observed. An x-ray photoelectron spectroscopy ͑XPS͒ study indicated that 0.37 eV-deep donors are N-vacancy related. On the other hand, no current transients took place in N 2 plasma treated and Al 2 O 3 -passivated samples. Temperature dependences of I -V curves of Schottky diodes were extremely small and reverse currents were anomalously large. They were explained by the ''thin surface barrier'' ͑TSB͒ model where thermionic field emission and field emission through the TSB region formed by deep donors produce leakage current paths. By combining the results on gateless HFETs and Schottky diodes, a new unified model of near-surface electronic states for the free surface and Schottky interface of AlGaN is proposed. It consists of a U-shaped surface state continuum and N-vacancy related near-surface discrete deep donors. The model can explain the observed large gate leakage and drain current collapse in AlGaN/GaN HFETs in a unified way. It is also shown that our novel Al 2 O 3 passivation, when also used as a gate insulator, can completely suppress current collapse and gate leakage.

show abstract

Section: Introductionmentioning

confidence: 99%

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hasegawa

Inagaki

Ootomo

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

213

148

View full text Add to dashboard Cite

show abstract

“…The reverse breakdown voltage of these diodes can be controlled by the static induction effect. Also, GaN based Schottky diodes with a higher breakdown voltage have been reported [14,15]. However, there is no report for GaN SBD with a low on-state voltage.…”

Section: Introductionmentioning

confidence: 98%

AlGaN/GaN field effect Schottky barrier diode (FESBD)

Yoshida

Ikeda

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

We demonstrate a novel field effect Schottky barrier diode (FESBD) with a dual Schottky structure combined with an AlGaN/GaN heterostructure to obtain a low on-voltage. The vertical and planar FESBDs were tried. A vertical AlGaN/GaN heterostructure was regrown by a selective area growth (SAG) technique using a metalorganic chemical vapor deposition (MOCVD). The contact layer was also grown using an SAG technique. Dual Schottky structures were fabricated to obtain a low on-voltage. That is, Al/Ti was used for a low Schottky barrier metal and Pt used for a higher barrier metal. The on-voltage of the diode was below 0.1 V. By the pinch-off effect of a higher Schottky barrier electrode, the reverse breakdown voltage was over 400 V although the Al/Ti used for a low Schottky barrier metal showed an ohmic property.

show abstract

“…Breakdown voltages of lateral GaN rectifiers on Sapphire substrates could be as high as 9.7 kV [25], but the forward voltage drop is still high. The interest of these diodes lies on their lower cost when implemented on Si or Sapphire substrates.…”

Section: Gan Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

View full text Add to dashboard Cite

It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

show abstract

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

Cited by 96 publications

References 17 publications

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

AlGaN/GaN field effect Schottky barrier diode (FESBD)

Wide Band Gap Semiconductor Devices for Power Electronics

Contact Info

Product

Resources

About