Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips

Wolf, Peter; Snauwaert, J.; Hellemans, Louis; Clarysse, Trudo; Vandervorst, W.; D’Olieslaeger, M.; Quaeyhaegens, D.

doi:10.1116/1.579754

Cited by 52 publications

(21 citation statements)

References 7 publications

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“…8 Above this doping level, the B-doped diamond films exhibit low resistivity values, in the range of 5 × 10 −3 Ω cm. 9 This allows for a wide range of different applications such as in microelectromechanical systems (MEMS) for high-frequency resonators 10,11 and electrical probes for atomic force microscopy (AFM), in particular applied in scanning spreading resistance microscopy (SSRM) 12,13 and scanning electrochemical microscopy.…”

Section: Introductionmentioning

confidence: 99%

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films

Buijnsters

Tsigkourakos

Hantschel

et al. 2016

ACS Appl. Mater. Interfaces

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Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro-and nanocrystalline diamond films Buijnsters CopyrightOther than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons. Takedown policyPlease contact us and provide details if you believe this document breaches copyrights. We will remove access to the work immediately and investigate your claim. ABSTRACT: B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented. Reciprocating sliding tests are performed on micro-and nanocrystalline diamond (MCD, NCD) films with varying B-doping levels and thicknesses. We demonstrate a linear dependency of the wear rate of the different diamond films with the B-doping level. Specifically, the wear rate increases by a factor of 3 between NCD films with 0.6 and 2.8 at. % B-doping levels. This increase in the wear rate can be linked to a 50% decrease in both hardness and elastic modulus of the highly B-doped NCD films, as determined by nanoindentation measurements. Moreover, we show that fine-grained diamond films are more prone to wear. Particularly, NCD films with a 3× smaller grain size but similar B-doping levels exhibit a double wear rate, indicating the crucial role of the grain size on the diamond film wear behavior. On the other hand, MCD films are the most wear-resistant films due to their larger grains and lower B-doping levels. We propose a graphical scheme of the wear behavior which involves planarization and mechanochemically driven amorphization of the surface to describe the wear mechanism of B-doped diamond films. Finally, the wear behavior of the nucleation surface of NCD films is investigated for the first time. In particular, the nucleation surface is shown to be susceptible to higher wear compared to the growth surface due to its higher grain boundary line density.

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Section: Introductionmentioning

confidence: 99%

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films

Buijnsters

Tsigkourakos

Hantschel

et al. 2016

ACS Appl. Mater. Interfaces

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“…Recent research has also extended conventional atomic force microscopy (AFM), combining nanoscale imaging and impedance spectroscopy. A modified conducting AFM tip is used as a conducting electrode to measure frequency-dependent impedance properties [5][6][7][8]. This technique is often referred to as scanning impedance or resistance microscopy and is capable of producing high-resolution impedance based images for materials very close to the surface of a sample.…”

Section: Introductionmentioning

confidence: 99%

Quantifying resistivity using scanning impedance imaging

Buss

Evans

Liu

et al. 2007

Sensors and Actuators A: Physical

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“…For SSRM measurements [8], a conductive diamond-coated silicon probe was used. Along with SSRM, standard atomic force microscopy (AFM) measurements were performed.…”

Section: Methodsmentioning

confidence: 99%

Controlled formation of Fe nanoparticles in silica

Šimkienė¹

2006

Lithuanian J. Phys.

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The SiO2:Fe films on Si substrates were produced by sol-gel and spinning techniques. Hybrid organic-inorganic precursor (tetraethoxysilane-FeCl3) and organic alkoxide precursor modified from Fe acetate were used. The Fe nanoparticles have been formed by various technological procedures. The structural, magnetic and optical characteristics of (SiO2:Fe) / Si samples depending on technology of sample preparation were examined. The size of Fe nanoparticles was shown to be controlled by precursor preparation procedure. It was found that Fe-containing nanocrystals of average size ∼40 nm were formed by "one-pot" technique from the mixture of solutions containing Fe salts and freshly prepared colloidal tetraethoxysilane (TEOS). In contrast, in the "two-pots" procedure, the components of precursor were prepared non-simultaneously and the structurized TEOS sol was used. In the latter case, Fe nanoparticles were distributed in size over a larger range with a mean value at ∼25 nm. It was hence concluded that precursor-controlled formation of Fe nanoparticles can be achieved using different sol-gel technological procedures.

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Lateral and vertical dopant profiling in semiconductors by atomic force microscopy using conducting tips

Cited by 52 publications

References 7 publications

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films

Quantifying resistivity using scanning impedance imaging

Controlled formation of Fe nanoparticles in silica

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