1998
DOI: 10.1002/(sici)1521-396x(199804)166:2<659::aid-pssa659>3.3.co;2-l
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Lateral Grain Growth during the Laser Interference Crystallization of a-Si

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Cited by 9 publications
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“…This phenomenon is known as Super Lateral Growth. [16][17][18] Above a given laser fluence, laterally growing grains appear in this regime, originating from the unmelted areas (interference minima) and propagating to the completely molten regions (interference maxima). In Figure 1(a) and 1(b), a centre-line at the interference maxima can be observed, which results from the lateral growth of the grains from both sides of the molten pool at the interference maxima following the temperature gradient.…”
Section: Microstructural Design Of Advanced Architecturesmentioning
confidence: 99%
“…This phenomenon is known as Super Lateral Growth. [16][17][18] Above a given laser fluence, laterally growing grains appear in this regime, originating from the unmelted areas (interference minima) and propagating to the completely molten regions (interference maxima). In Figure 1(a) and 1(b), a centre-line at the interference maxima can be observed, which results from the lateral growth of the grains from both sides of the molten pool at the interference maxima following the temperature gradient.…”
Section: Microstructural Design Of Advanced Architecturesmentioning
confidence: 99%
“…Due to the thermal interaction, one can achieve a metallurgical treatments on the surface, such as phase transition, re-solidification, re-crystallization, phase transformation, chemical processes, and dislocation formation. [26][27][28][29][30][31] However, the periodic pattern now allows the opportunity for local and periodic treatment and the in-situ growth of one phase or defect structure in another, and thereby the formation of an in-situ composite with very strong and reticulated interfaces down to the atomic level. [31,32] By producing intermetallics in metal (Ni-Al) thin film systems, a periodic mechanical composite can be created.…”
Section: Mechanical Propertiesmentioning
confidence: 99%
“…Ultraviolet (UV) light has been used to induce structural modification in a-CN [4] or crystallization of a-Si [5] and a-SiO x [6]. But no much insight exists concerning the effect of the UV photons on the structure of the SiO x when the material remains amorphous.…”
Section: Introductionmentioning
confidence: 99%