Lateral Graphene Heterostructure Field-Effect Transistor

Moon, J. W.; Seo, Hwa-Chang; Stratan, Fred; Antcliffe, M.; Schmitz, A.; Ross, Richard S.; Kiselev, A. A.; Wheeler, Virginia D.; Nyakiti, Luke O.; Gaskill, D. Kurt; Lee, Kang-Mu; Asbeck, P.M.

doi:10.1109/led.2013.2270368

Cited by 45 publications

(21 citation statements)

References 23 publications

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“…From the recent measurements of graphene FETs grown epitaxially on SiC, it has been shown that the sheet resistance of approximately 400 Ω=sq is practically realizable along with the contact resistance less than 100 Ω μm [30,31]. Needless to say, the actual base resistance also depends on the specific geometry and can be optimized further by adopting the design practices frequently used in conventional high-frequency applications such as the high aspect ratio of the device cross section and the double-sided base contact [32].…”

Section: Resultsmentioning

confidence: 99%

Hot-Electron Transistors for Terahertz Operation Based on Two-Dimensional Crystal Heterostructures

Kong

Jin

2014

Phys. Rev. Applied

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This work illustrates the feasibility of ultra-high-frequency operation in a vertical three-terminal electronic device by exploiting the advantages of two-dimensional (2D) crystal heterostructures. The proposed device utilizes a gapped 2D material as the tunnel barrier between a graphene base and a metallic emitter, while the Schottky contact with an n-type substrate forms the base-collector junction. The ultrathin active region formed by the 2D insulating and semimetallic layers ensure the required subnanometer-scale control in the thickness and the lateral uniformity, overcoming the major limitations of conventional 3D materials. Atomistic simulations based on the coupled density functional theory and nonequilibrium Green's function method, in combination with an equivalent device model, clearly reveal well-defined transistor characteristics with a good current drive. The analysis also points out the prominence of emitter material selection for superior performance. With proper optimization, the device is capable of reaching the intrinsic cutoff frequencies over a few THz even under realistic constraints, indicating a technological pathway beyond the current limit.

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Section: Resultsmentioning

confidence: 99%

Hot-Electron Transistors for Terahertz Operation Based on Two-Dimensional Crystal Heterostructures

Kong

Jin

2014

Phys. Rev. Applied

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“…The work function of graphene is known to be equal to 4.3-4.6 eV. [17][18][19] The work function of fluorographene as estimated in the theoretical studies 19,20 is 6.0-7.3 eV. Nonetheless, experimental studies of charge transport in lateral graphene/fluorographene/graphene transistor structures clearly demonstrate the presence of a potential barrier in such structures.…”

Section: Discussionmentioning

confidence: 97%

“…The height of the latter potential barrier was estimated by Moon et al as 0.26 eV. 18 The temperature dependence of resistivity in few-layer graphene films with QDs prepared by means of HF functionalization also gives for the activation energies values 0.12 and 0.35 eV. 16 So the detailed band alignment between graphene and fluorographene is presently not known, and the existence of a potential barrier for migration of charge carriers between graphene and fluorographene can be anticipated.…”

Section: Discussionmentioning

confidence: 99%

Light-assisted recharging of graphene quantum dots in fluorographene matrix

Antonova

Nebogatikova

Prinz

et al. 2014

Journal of Applied Physics

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In the present study, the charge transient spectroscopy was used to analyze the transient relaxation of charges in graphene and bilayer-graphene quantum dot (QD) systems formed by chemical functionalization of graphene and few-layer graphene layers. A set of activation energies (one to three different values) for the emission of charges from QDs sized 50 to 70 nm, most likely proceeding via the thermal activation of charge carriers from QD quantum confinement levels, were deduced from measurements performed in the dark. Daylight illumination of samples during measurements was found to result in a strong decrease of the activation energies and in an involvement of an athermal process in the charge relaxation phenomenon. The time of the light-assisted emission of charge carriers from QDs proved to be two to four orders of magnitude shorter than the time of their emission from QDs under no-illumination conditions.

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“…Also, FET noise performance equal to or exceeding that of exfoliated graphene and frequency multiplication in the GHz range has been demonstrated [91]. Using EG produced under 100 mbar of Ar, a partially processed lateral FET was exposed to fluorine, resulting in the formation of fluorographene; this FET subsequently exhibited an encouraging on/off ratio of 10 5 [94]. Using EG produced under 100 mbar of Ar, a partially processed lateral FET was exposed to fluorine, resulting in the formation of fluorographene; this FET subsequently exhibited an encouraging on/off ratio of 10 5 [94].…”

Section: Growth On Si-face Using the Blanket Gas Approachmentioning

confidence: 99%