Lateral schottky GaN rectifiers formed by Si+ ion implantation

Irokawa, Yoshihiro; Kim, Ji Hyun; Ren, F.; Baik, Kwang Hyeon; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Pan, C.-C.; Chen, G. T.; Chyi, J. I.

doi:10.1007/s11664-004-0196-5

Cited by 3 publications

(1 citation statement)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The use of the ion-implantation technique, which allows the reliable and controllable introduction of ions to a defined region and is not limited by solid solubility, is a critical requirement for advances in GaN device technology. GaN epilayers have been implanted with many kinds of ions [7][8][9][10][11][12][13][14][15][16][17][18]. The microstructural, electrical, and optical properties of the ion-implanted GaN epilayers are critical to device performance.…”

Section: Introductionmentioning

confidence: 99%

Resonant Raman Scattering in Boron-Implanted GaN

et al. 2022

View full text Add to dashboard Cite

A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA). The resonant Raman spectrum (RRS) showed a strong characteristic of a photoluminescence (PL) emission peak associated with GaN before B-ion implantation and RTA treatment. The PL signal decreased significantly after the B-ion implantation and RTA treatment. The analysis of temperature-dependent Raman spectroscopy data indicated the activation of two transitions in B-ion-implanted GaN in different temperature ranges with activation energies of 66 and 116 meV. The transition energies were estimated in the range of 3.357–3.449 eV through calculations. This paper introduces a calculation method that can be used to calculate the activation and transition energies, and it further highlights the strong influence of B-ion implantation on the luminesce of GaN.

show abstract

Section: Introductionmentioning

confidence: 99%

Resonant Raman Scattering in Boron-Implanted GaN

et al. 2022

View full text Add to dashboard Cite

show abstract

Electrical activation characteristics of silicon-implanted GaN

Irokawa

Fujishima

Kachi

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

Electrical activation studies of Si-implanted GaN layers on sapphire were made as a function of annealing temperature (1100–1400°C). For an ion dose of 1.0×1014cm−2, the optimum annealing temperature was 1400°C, exhibiting a nearly 100% electrical activation efficiency and a low sheet resistance of ∼450Ω∕square at room temperature. From variable temperature Hall-effect measurements, Si-implanted GaN films annealed below 1200°C displayed deep ionization levels of ∼280meV, whereas samples annealed above 1300°C had shallow ones of ∼11meV. For lateral Schottky diodes fabricated on Si-implanted GaN layers annealed below 1200°C, capacitance frequency and thermal admittance measurements showed a typical dispersion effect characteristic of a single deep donor with an activation energy of ∼133meV. These results illustrate that deep donor levels created by the Si implantation in GaN layers apparently annihilate and transit to shallow levels produced by the Si ion substitution for Ga in the GaN lattice (SiGa) by annealing at temperature greater than ∼1300°C at these doses.

show abstract

Implantation temperature dependence of Si activation in AlGaN

Irokawa

Ishiguro

Kachi

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

Si + ion implantation at a total dose of 1.0×1015cm−2 and multiple ion energies in the range of 30–190keV into Al0.13Ga0.87N layers on sapphire substrates for n-type doping was carried out at substrate temperatures ranging from −196to700°C, followed by annealing at 1150–1400°C for 5min. The activation efficiency at fixed annealing temperature (1250°C) was highest (∼50%) for room temperature implantation and degraded significantly for elevated temperature implantation. The effective Si donor ionization energy decreased with increasing annealing temperature, which may be related to the Mott transition that creates degenerate layers as the activation percentage increased. The minimum sheet resistance obtained was ∼100Ω∕sq after annealing room temperature implants at 1350–1400°C.

show abstract

Lateral schottky GaN rectifiers formed by Si+ ion implantation

Cited by 3 publications

References 43 publications

Resonant Raman Scattering in Boron-Implanted GaN

Resonant Raman Scattering in Boron-Implanted GaN

Electrical activation characteristics of silicon-implanted GaN

Implantation temperature dependence of Si activation in AlGaN

Contact Info

Product

Resources

About