Lateral shifts of spin electron beams in antiparallel double nanostructure

Kong, Yong-Hong; Lu, Mao‐Wang; Chen, Sai‐Yan; Zhang, Guilian

doi:10.1016/j.jmmm.2012.03.030

Cited by 19 publications

(7 citation statements)

References 22 publications

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“…The proposed spatially separating spin filter and spin beam splitter are different from those designed by the refraction of a spin electron beam at the interface by considering spin-orbit coupling of Rashba and Dresselhaus types [67,68]. Following the work in [45], Lu's group has also investigated the tunable GH shift and spin beam splitter in the magnetic barrier nanostructure and its variants [46,47,48,49]. For example, the realistic magnetic barriers created by lithographic patterning of ferromagnetic or superconducting film have been further considered [49].…”

Section: Applications In Spintronicsmentioning

confidence: 99%

“…For instance, the GH shift in magnetic-electric nanostructures can be utilized to design a spin beam splitter, when the GH shift can be controlled by adjusting the electric potential induced by an applied voltage and the magnetic field strength of ferromagnetic stripes [45]. For recent developments in this line of research, see [46][47][48][49].…”

Section: Introductionmentioning

confidence: 99%

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Electronic analogy of the Goos–Hänchen effect: a review

Chen¹,

Lu²,

Ban³

et al. 2013

J. Opt.

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Abstract. The analogies between optical and electronic Goos-Hänchen effects are established based on electron wave optics in semiconductor or graphene-based nanostructures. In this paper, we give a brief overview of the progress achieved so far in the field of electronic Goos-Hänchen shifts, and show the relevant optical analogies. In particular, we present several theoretical results on the giant positive and negative Goos-Hänchen shifts in various semiconductor or graphen-based nanostructures, their controllability, and potential applications in electronic devices, e.g. spin (or valley) beam splitters.

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Section: Applications In Spintronicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic analogy of the Goos–Hänchen effect: a review

Chen¹,

Lu²,

Ban³

et al. 2013

J. Opt.

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“…The lateral displacement (LD) and its spin polarization for the spin electron in other magnetic nanostructures have been explored since then, and related spin spatial splitters were successfully proposed. [25][26][27][28] It is well known that a tunable spin-polarized source is desired for spintronic applications. 29 More recently, taking the hybrid magnetic-electric-barrier nanostructure into account, Ma et al 30 proposed an idea to control the spin spatial splitter by the transverse electric field.…”

Section: Introductionmentioning

confidence: 99%

Electrically-Controllable Spin Spatial Splitter in a Novel Magnetic Nanostructure

Shen

Liu

2016

Journal of Elec Materi

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Based on a novel magnetic nanostructure with zero average magnetic field, a spin spatial splitter was recently proposed. This paper reports on how to effectively manipulate this device using a transverse electrical field with an applied bias. With the help of the stationary phase method, the lateral displacement and its spin polarization are calculated for the electron across this device. Both magnitude and sign of spin polarization are found to vary sensitively with this applied electric field. Thus, this device can be controlled conveniently by electric means, and can consequently serve as an electricallytunable spin spatial splitter for spintronics applications.

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“…Thus, based on the GH effect of spin electron beams in such a MMSN, a spin beam splitter was proposed, which completely separates spin‐up and spin‐down electron beams by their corresponding spatial GH shifts. The spin‐dependent GH effects in other MMSNs have been investigated since then, and spin beam splitters were proposed theoretically .…”

Section: Introductionmentioning

confidence: 99%

Manipulating spin beam splitter by electric field in hybrid ferromagnetic-Schottky-stripe and semiconductor nanostructure

Cao

et al. 2013

Phys. Status Solidi B

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Recently, a spin beam splitter, which operates via the Goos–Hänchen (GH) effect of electrons, was fabricated by depositing ferromagnetic and Schottky metal stripes on top of a semiconductor heterostructure. To explore effective manipulation of its spin polarization of GH shifts, we introduce a transverse electric field into the device. Theoretical analysis and numerical simulation show that both magnitude and sign of the spin polarization are related closely to this electric field. Thus, this spin beam splitter can be used as an electrically controllable spin‐polarized source for spintronics applications.

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Lateral shifts of spin electron beams in antiparallel double nanostructure

Cited by 19 publications

References 22 publications

Electronic analogy of the Goos–Hänchen effect: a review

Electronic analogy of the Goos–Hänchen effect: a review

Electrically-Controllable Spin Spatial Splitter in a Novel Magnetic Nanostructure

Manipulating spin beam splitter by electric field in hybrid ferromagnetic-Schottky-stripe and semiconductor nanostructure

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