Lateral Thermo-magneto-optoelectronic Effects in a 3C-SiC Nanothin Film on the Si Heterojunction

Abstract

The lateral photovoltaic effect (LPE) of an n-type cubic silicon carbide (n-3C-SiC) on an n-type silicon (n-Si) heterostructure in a thermo-magnetic environment is examined for the first time in this study for use in position-sensitive detectors (PSDs). Under 2 mW of 637 nm laser irradiation and at room temperature (T = 298 K), the n-3C-SiC/n-Si device with an electrode spacing of 300 μm demonstrated an excellent position sensitivity of 442 mV/mm. The study shows that the thermal and magnetic fields have significantly affected the sensitivity of the PSD device. In addition, this research presents the photogeneration and transportation of electron−hole pairs in the heterostructure under the influence of heat and magnetic field in three directions of the Cartesian coordinate system. The underpinning physic mechanism of charge carrier movement in the heterojunctions as well as the generation and separation of electron−hole pairs in a self-power mode is employed to explain physical phenomena in the paper. The findings will have a significant impact on the development of PSDs that not only function under challenging conditions but also demonstrate the potential of magnetic and thermal sensors. This opens up a promising signal for thermal and magnetic sensors with a self-power mode that draws power from natural light (sunlight).