Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Ma, Peipei; Zheng, Jun; Zhang, Yabao; Liu, Xiangquan; Li, Zhi; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen

doi:10.1088/1674-1056/ac2729

Cited by 3 publications

(1 citation statement)

References 30 publications

(42 reference statements)

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“…The photodetector with MSM structure was fabricated on the β-Ga 2 O 3 film with T B = 700 °C. Si ion implantation process [17,18] was performed and followed by deposition of Ti/Au electrode. After lift-off process, the interdigital electrodes were formed and the rapid thermal annealing at 475 °C for 1 min was conducted.…”

Section: Methodsmentioning

confidence: 99%

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Ma,

Zheng,

Liu

et al. 2024

J. Semicond.

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In this work, a two-step metal organic chemical vapor deposition (MOCVD) method was applied for growing β-Ga2O3 film on c-plane sapphire. Optimized buffer layer growth temperature (T B) was found at 700 °C and the β-Ga2O3 film with full width at half maximum (FWHM) of 0.66° was achieved. A metal−semiconductor−metal (MSM) solar-blind photodetector (PD) was fabricated based on the β-Ga2O3 film. Ultrahigh responsivity of 1422 A/W @ 254 nm and photo-to-dark current ratio (PDCR) of 106 at 10 V bias were obtained. The detectivity of 2.5 × 1015 Jones proved that the photodetector has outstanding performance in detecting weak signals. Moreover, the photodetector exhibited superior wavelength selectivity with rejection ratio (R 250 nm/R 400 nm) of 105. These results indicate that the two-step method is a promising approach for preparation of high-quality β-Ga2O3 films for high-performance solar-blind photodetectors.

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Section: Methodsmentioning

confidence: 99%

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Ma,

Zheng,

Liu

et al. 2024

J. Semicond.

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Design and Simulation of α-Ga₂O₃ Lateral Schottky Barrier Diodes with Field Plate Structure

Li,

Niu,

Ning

et al. 2024

2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET)

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Investigation of high-temperature performance of WO3/β-Ga2O3 heterojunction deep-ultraviolet photodetectors

Zhang,

Ma,

Wang

et al. 2023

Acta Phys. Sin.

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Due to the high bandgap of up to 4.8 eV, Ga2O3 has a natural advantage in the field of deep-ultraviolet (DUV) detection. Ga2O3-based photoconductors, Schottky and heterojunction detectors have been proposed and have shown excellent photodetection performance. Ga2O3 heterojunction detectors are self-driven and feature low power consumption. On the other hand, considering the ultra-wide bandgap and low intrinsic carrier concentration, Ga2O3-based photodetectors are exhibiting important applications in high-temperature photodetection. In this work, a WO3/β-Ga2O3 heterojunction DUV photodetector was constructed and the effect of high temperature on its detection performance was investigated. β-Ga2O3 films were prepared by metal-organic chemical vapor deposition (MOCVD), and WO3 films and Ti/Au ohmic electrodes were prepared by spin-coating and magnetron sputtering techniques, respectively. The current-voltage (I-V) and current-time (I-t) measurements were performed at different ambient temperatures. Parameters including light-dark-current ratio (PDCR), responsivity (R), detectivity (D*), and external quantum efficiency (EQE) were extracted to evaluate the deep-ultraviolet detection performance and its high-temperature stability. At room temperature (300 K), the PDCR, the R, the D*, and the EQE of the detector are 3.05×106, 2.7 mA/W, 1.51×1013 Jones, and 1.32%, respectively. As the temperature increases, the dark current of the device increases and the photocurrent decreases, resulting in the degradation of the photodetection performance. To explore the physical mechanisms underlying the degradation of the detection performance, the effect of temperature on the carrier generation-combination process is investigated. It is found that the main reason is that the Shockley-Read-Hall (SRH) generation-combination mechanism is enhanced with the increase in temperature. Recombination centers are introduced from the crystal defects and interfacial defects, which are the main source of the SRH process. Specifically, the dark current mainly comes from the depletion region of WO3/β-Ga2O3, and the carrier generation rate in the depletion region is enhanced with increasing temperature, which leads to the rise of dark current. Similarly, the increase in temperature leads to the improvement of the recombination process, thereby the photocurrent decreases at a higher temperature. This effect can also well explain the variation in response time at high temperatures. Overall, it is exhibited that the WO3/β-Ga2O3 heterojunction photodetector can achieve stable self-powered operation even at an ambient temperature of 450 K, indicating that the all-oxide heterojunction detector has potential applications in harsh detection environments.

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Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Cited by 3 publications

References 30 publications

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Design and Simulation of α-Ga₂O₃ Lateral Schottky Barrier Diodes with Field Plate Structure

Investigation of high-temperature performance of WO<sub>3</sub>/<b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> heterojunction deep-ultraviolet photodetectors

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Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Cited by 3 publications

References 30 publications

Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector

Two-step growth of β-Ga2O3 on c-plane sapphire using MOCVD for solar-blind photodetector

Design and Simulation of α-Ga2O3 Lateral Schottky Barrier Diodes with Field Plate Structure

Investigation of high-temperature performance of WO<sub>3</sub>/<b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> heterojunction deep-ultraviolet photodetectors

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Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Two-step growth of β-Ga₂O₃ on c-plane sapphire using MOCVD for solar-blind photodetector

Design and Simulation of α-Ga₂O₃ Lateral Schottky Barrier Diodes with Field Plate Structure