Laterally-asymmetric-channel-insulated-shallow-extension-silicon-on-nothing LAC-ISE-SON MOSFET for improved reliability and digital circuit simulation

Kumari, Vandana; Saxena, Manoj; Gupta, Radha; Gupta, Mridula

doi:10.1109/icdcsyst.2012.6188722

Cited by 1 publication

(1 citation statement)

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“…The reduction in electron temperature at the drain side is only because of the presence of side pillars. The gate and substrate leakage current are also suppressed in case of ISE-SON architecture as compared to other devices [7]. Although, the suitability of the ISE-SON for analog applications has been discussed in detailed [4,5] but suitability for low-voltage digital application is still not discussed.…”

Section: Introductionmentioning

confidence: 98%

Performance Investigation of Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET for Low Volatge Digital Applications

Kumari¹,

Saxena²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.

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Section: Introductionmentioning

confidence: 98%