2023
DOI: 10.1038/s41467-023-41991-3
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Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Sangyong Park,
Dongyoung Lee,
Juncheol Kang
et al.

Abstract: In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In2Se3 is utilized to regulate the channel conductance. Our study examined the distinctive cha… Show more

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Cited by 13 publications
(1 citation statement)
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“…This characteristic leads to a superior multidomain polarization switching ability for ferroelectric materials; hence, ferroelectric multilevel channel conductance can be reached in FeFET devices [101][102][103]. These ferroelectric materials have then been used as a channel in FeFET-based synaptic devices [104][105][106][107]. For example, Tang et al fabricated a ferroelectric synaptic transistor based on α-indium selenide (α-In 2 Se 3 ) (Figure 5a) [108].…”
Section: Ferroelectric Polarizationmentioning
confidence: 99%
“…This characteristic leads to a superior multidomain polarization switching ability for ferroelectric materials; hence, ferroelectric multilevel channel conductance can be reached in FeFET devices [101][102][103]. These ferroelectric materials have then been used as a channel in FeFET-based synaptic devices [104][105][106][107]. For example, Tang et al fabricated a ferroelectric synaptic transistor based on α-indium selenide (α-In 2 Se 3 ) (Figure 5a) [108].…”
Section: Ferroelectric Polarizationmentioning
confidence: 99%