Laterally overgrown structures as substrates for lattice mismatched epitaxy

Żytkiewicz, Z. R.

doi:10.1016/s0040-6090(02)00315-2

Cited by 65 publications

(33 citation statements)

References 44 publications

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“…Since the mask efficiently blocks substrate dislocations, laterally overgrown parts of the ELO layers exhibit much lower dislocation density than that observed in standard planar epilayers grown on the substrate. Therefore, if combined with well-developed methods of buffer layers engineering the ELO technique offers the possibility of producing high quality substrates with adjustable value of lattice constant required by modern electronics (see [6,7]). This is the main reason for a widespread interest in a deeper understanding of ELO growth mechanism and in the development of efficient ELO growth techniques.…”

Section: Introductionmentioning

confidence: 99%

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

Żytkiewicz

Dobosz

Liu

et al. 2005

Cryst. Res. Technol.

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The article presents a short review of recent developments in epitaxial lateral overgrowth (ELO) of thin layers of III-V compound semiconductors by liquid phase epitaxy (LPE) and also by liquid phase electroepitaxy (LPEE). The focus is on the relative contributions of various transport processes involved in ELO toward the growth of high quality, dislocation free thin layers of semiconductors with large width/thickness ratios. Results of our experimental and modelling studies on lateral overgrowth by LPE are used as examples. Furthermore, the application of LPEE for lateral overgrowth of compound semiconductors, a new emerging area of ELO technology, is discussed, and some experimental and numerical results are presented.

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Section: Introductionmentioning

confidence: 99%

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

Żytkiewicz

Dobosz

Liu

et al. 2005

Cryst. Res. Technol.

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“…As soon as the crystallisation front exceeds the top layer of the mask, the growth starts in lateral direction over the masking film. ELO technique is used mainly to reduce defect density in lattice mismatched heteroepitaxial systems (see [3] for a review). However, homoepitaxial version the ELO technique also finds its practical application in production of silicon-on-insulator structures [4], MOS transistors [5], field effect transistors [6], solar cells [7], pressure sensors [8] and for three-dimensional device integration [9].…”

Section: Introductionmentioning

confidence: 99%

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Dobosz

Żytkiewicz²,

Piotrowski

et al. 2003

Cryst. Res. Technol.

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Liquid phase epitaxial lateral overgrowth of GaAs layers on GaAs substrates masked by tungsten films was studied. We show that at our growth conditions perfect growth selectivity was obtained, so the layers started growing from the openings cut in the mask only. However, serious damage of the mask during epitaxial growth was observed. As this deteriorates crystallographic quality of the layers a procedure was elaborated to eliminate degradation of the tungsten film by the melt. In particular, reduction of growth temperature and deposition of Au/Zn wetting layers between tungsten film and the GaAs substrate were found important to avoid degradation of the mask and for successful lateral growth of the layers. Tungsten masked GaAs substrates were then used for lateral overgrowth of GaAs by liquid phase electroepitaxy. Preliminary results are presented showing that application of electrically conductive tungsten mask, which allows a direct DC current flow from the melt to the substrate, results in much wider and thinner electroepitaxial layers than those grown on the substrates coated by insulating film.

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“…Let us note that the Bragg angle continuously increases from the left to the right edge of the ELO stripe. This is an indication of downward wing tilt -the phenomenon commonly observed in many ELO systems and being due to an interaction of laterally overgrown parts of the layer with the mask underneath [3]. The value of the wing tilt angle ∆α ≈ 0.3…”

Section: Resultsmentioning

confidence: 92%

Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers

et al. 2009

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X-ray rocking curve imaging technique was used to study crystallographic perfection of laterally overgrown epitaxial structures. We focus on rocking curve imaging studies of Si-doped GaAs and GaSb laterally overgrown layers grown by liquid phase epitaxy on SiO 2 masked GaAs and GaSb/GaAs substrates, respectively. High spatial resolution offered by rocking curve imaging technique allows studying the effect of laterally overgrown epitaxial wing tilt towards the mask. Distribution of tilt magnitude over the area of laterally overgrown epitaxial stripes is easily determined. In heteroepitaxial GaSb/GaAs laterally overgrown epitaxial structures local mosaicity in the wing area was detected. Since individual grains are clearly visible on rocking curve imaging maps, their size and relative misorientation can be determined.

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Laterally overgrown structures as substrates for lattice mismatched epitaxy

Cited by 65 publications

References 44 publications

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

Recent progress in lateral overgrowth of semiconductor structures from the liquid phase

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

Rocking Curve Imaging Studies of Laterally Overgrown GaAs and GaSb Epitaxial Layers

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