Latest developments in planar n-on-p sensors

Abstract

To further extend the ultimate physics reach of the experiments at the Large Hadron Collider (LHC), a series of accelerator and experimental upgrades are planned between 2014 and 2022. The final machine upgrade, called the High Luminosity-LHC (HL-LHC), is foreseen to increase the instantaneous luminosity by a factor ten with a targeted total integrated luminosity of 3000 fb −1. To cope with the predicted high particle rates and intense radiation doses, n-inp FZ planar technolgy has been developed with remarkable radiation tolerance. This technology might even be able to withstand the harsh environment at the innermost layers of the experimental upgrades for the HL-LHC. This article summarizes the current understanding of the radiation tolerance of n-in-p FZ sensors. Plans and recent progress in prototyping silicon micro-strip and pixel devices at various foundries is shown. The different R&D efforts to reduce the inactive regions and to enhance the charge multiplication properties of such devices are also described.

4D tracking with ultra-fast silicon detectors

“…The effect of trapping can be seen in Figure 26 [37] where the collected charge is shown to decrease as a function of fluence for 300µm thick sensors. It should be pointed out that the change in collected charge is much less for thin detectors.…”

“…Figure 26 Collected charge for 300 µm thick n-on-p sensors as a function of fluence. Figure taken with permission from [37] Acceptor creation by deep traps and initial acceptor (Boron) removal [38] in silicon detectors can be parameterized according to the following expression:…”

Charge Injection Devices

“…Other sensor developments focused on LHC luminosity upgrade include n on p devices, three dimensional (3D) sensors and high voltage operation of these devices. Latest results were reviewed at the Vertex 2011 conference [17,18] and additionally by common publications of CERN RD50 Collaboration [for instance 19,20].…”

R&D paths of pixel detectors for vertex tracking and radiation imaging

“…This option has been considered since p-type detector grade silicon has become routinely available and n-on-p pixel sensors are currently developed at different facilities in view of the upgrades at the LHC [75]. Comparable performance have indeed been observed for n-on-n and n-on-p sensors in terms of charge collection efficiency after large radiation fluences [69].…”