Latest results of the German joint project &amp;#x201C;flexible CIGSe thin film solar cells for space applications&amp;#x201D;

Zajac, Kai; Brunner, S.; Kaufmann, Christian A.; Caballero, R.; Schock, Hans‐Werner; Rahm, A.; Scheit, C.; Zachmann, H.; Keßler, Friedrich; Wuerz, Roland; Schülke, P.

doi:10.1109/pvsc.2010.5614100

Cited by 2 publications

(2 citation statements)

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“…The work presented in this paper describes one avenue for achieving a high specific power PV for future space application. Competing technologies are also in development, such as copper indium gallium diselenide (GIGS) [8,9], amorphous silicon [10] and inverted metamorphic multi-junction (IMM) [11]. The German Joint Project [8] targets the development of a flexible CIGS thin film solar cell technology on a polyimide substrate.…”

Section: Introductionmentioning

confidence: 99%

“…Competing technologies are also in development, such as copper indium gallium diselenide (GIGS) [8,9], amorphous silicon [10] and inverted metamorphic multi-junction (IMM) [11]. The German Joint Project [8] targets the development of a flexible CIGS thin film solar cell technology on a polyimide substrate. The IMM is an example of gallium arsenide based triple junction technology where the usual sequence for cell growth is reversed with the top cell being deposited first and the bottom cell last.…”

Section: Introductionmentioning

confidence: 99%

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Lightweight and low‐cost thin film photovoltaics for large area extra‐terrestrial applications

Lamb

Irvine

Clayton

et al. 2015

IET Renewable Power Generation

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This work describes progress towards achieving a flexible, high specific power and low-cost photovoltaic (PV) for emerging large area space applications. The study reports the highest conversion efficiency of 15.3% AM1.5G for a CdTe device on ultra-thin cerium-doped cover glass, the standard protective material for extra-terrestrial PVs. The deposition technique used for all of the semiconductor layers comprising the device structure was atmospheric pressure metal organic chemical vapour deposition. Improvements to the device structure over those previously reported led to a V oc of 788 mV and a relatively low series resistance of 3.3 Ω•cm 2. These were largely achieved by the introduction of a post-growth air anneal and a refinement of the front contact bus bars, respectively. The aluminiumdoped zinc oxide transparent conductive oxide, being the first layer applied to the cover glass, was subject to thermal shock cycling +80 to (−) 196°C to test the adhesion under the extreme conditions likely to be encountered for space application. Scotch Tape testing and sheet resistance measurements before and after the thermal shock testing demonstrated that the aluminium-doped zinc oxide remained well adhered to the cover glass and its electrical performance unchanged.

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