Lattice damage and nanohardness in 6H–SiC implanted with multiple-energy Xe ions

Li, J.J.; Zhang, C.H.; Xu, Chaoliang; Jia, Xuchao; Yin, Shi; Jin, Yufeng

doi:10.1016/j.nimb.2011.11.034

Cited by 16 publications

(4 citation statements)

References 24 publications

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“…6, the logarithm of the inverse of the swelling value is represented versus the inverse of the temperature. A linear regression through the calculated data yields an activation energy of 82 meV, in excellent agreement with the experiments [10,28]. Although it is possible that the MD simulations effectively reproduce the same mechanisms than in experiments, one has to be cautious that such an agreement might well be fortuitous.…”

Section: Evolution During Annealingsupporting

confidence: 72%

“…Previous experiments have shown that the maximum swelling associated with xenon implantation decreases with the temperature according to an Arrhenius-like behavior, and activation energies in the range [67 − 70] meV [10,28]. In this section the relation between swelling and temperature is investigated, using the large systems described above.…”

Section: Evolution During Annealingmentioning

confidence: 99%

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Atomistic modeling of point defect contributions to swelling in Xe-implanted silicon carbide

Pizzagalli

2018

Journal of Nuclear Materials

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Atomistic calculations using a newly developed Xe-SiC interatomic potential are carried out to determine the contributions of point defects to the strain build up in Xe implanted 4H-SiC. Relaxation volumes for individual point defects are calculated, and analysed in comparison to the swelling determined in a simulation including a large homogeneous distribution of these defects. These investigations confirm the negligible influence of the implanted gas, with the swelling mostly originating from intrinsic point defects generated by implantation. Using experimental swelling data, possible point defects distributions are determined as a function of the dose. Strain reduction during annealing simulations is shown to be due to dynamic recombination of point defects, with an estimated activation energy in excellent agreement with experiments.

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Section: Evolution During Annealingsupporting

confidence: 72%

Section: Evolution During Annealingmentioning

confidence: 99%

Atomistic modeling of point defect contributions to swelling in Xe-implanted silicon carbide

Pizzagalli

2018

Journal of Nuclear Materials

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“…Recently, series of Zr-Ti based alloys have been developed and shown good mechanical properties, while their applicability and stability during application upon extreme conditions are rare of knowledge [6-9]. It's then crucial to justify the applicability of Zr-Ti systems when upon high particle irradiation conditions.Charged Xenon ions with different energy have been widely used as the implantation, ion mixing and damage simulation sources [10][11][12]. With their chemical inertness to the target, the reaction process can be simply described into physical damage which will cause crystalline defects of vacancies and interstitials.…”

mentioning

confidence: 99%

“…Charged Xenon ions with different energy have been widely used as the implantation, ion mixing and damage simulation sources [10][11][12]. With their chemical inertness to the target, the reaction process can be simply described into physical damage which will cause crystalline defects of vacancies and interstitials.…”

mentioning

confidence: 99%