Lattice energy and electronic polarizability of binary tetrahedral semiconductors

Kuḿar, V.; Prasad, G.M.; Chandra, D.

doi:10.1016/s0022-3697(96)00141-2

Cited by 17 publications

(26 citation statements)

References 22 publications

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“…The above physical parameters are computed using Eqns (1)(2)(3)(4)(5)(6)(7)(8) and are listed in Tables 2 to 5. The relevant K values are listed in Table I .…”

Section: Resultsmentioning

confidence: 99%

Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Reddy¹,

Aharnmed²,

Azeem³

et al. 2003

DSJ

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Interesting relationships have been found between refractive index, plasmon energy, electronic polarisability, bond length, microhardness, bulk modulus, force constants and lattice energy. An attempt has been made for the first time to correlate only one physical parameter with others. The calculated values are in good agreement with the experimental values as well as with the values reported in the literature. Refractive index data is the only one parameter required to estimate all the above parameters.

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“…The above physical parameters are computed using Eqns (1)(2)(3)(4)(5)(6)(7)(8) and are listed in Tables 2 to 5. The relevant K values are listed in Table I .…”

Section: Resultsmentioning

confidence: 99%

Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Reddy¹,

Aharnmed²,

Azeem³

et al. 2003

DSJ

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“…Kumar et al [26], have developed a relation based on the plasma oscillations theory of solids for the 28.8…”

Section: Previous Theories For the Analysis Of Optoelectronic Propertmentioning

confidence: 99%

“…∆χ* Duffy's [33,34] ∆χ* This work n (Exp.) [41] n (Moss) [41] n (Ravindra) [41] This work α(Å3) [22] α(Å3) [21] α(Å3) [25,26] …”

Section: Journal Of Materials Physics and Chemistrymentioning

confidence: 99%

Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Pal¹,

Tiwari²,

Gupta³

et al. 2014

JMPC

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In order to enhance the viability of this paper for that issue, we suggest adding this to the beginning of IV C 2 V ) structured solids. The electronic polarizability (α), refractive index (n), band gap (E g ) and optical electronegativity (∆χ) of these solids exhibit a linear relationship when plotted against the average atomic number constituent atoms (Z av ), but fall on different lines due to the region of product of the ionic charges (PIC) of the compounds. We have applied the proposed relation on these solids and found a better agreement with the experimental data as compared to the values evaluated by earlier researchers so far.

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“…Different theoretical models, based on the Born-Haber theory, have been proposed by several other researchers [12,13] and the plasmon oscillations theory of solids has been used by Reddy et al [14,15] for the calculation of U of the binary semiconductors and later used by Kumar et al [16] V semiconductors may be expressed as…”

Section: VImentioning

confidence: 99%

“…Equation (1b) is valid for free electrons but it is also applicable for semiconductors and VI semiconductors, which depends upon the product of ionic charges. In this figure all lattice energy values are taken from [16].…”

Section: VImentioning

confidence: 99%

Lattice energy of zinc blende (A^IIIB^V and A^IIB^VI) solids

Verma

Sharma

2008

Physica Status Solidi (b)

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In this paper we present an expression relating the lattice energy (U in kcal/mol) for the AIIIBV and AIIBVI semiconductors with the product of ionic charges (Z1Z2) and nearest‐neighbor distance d (Å). The lattice energy of these compounds exhibit a linear relationship when plotted on a log–log scale against the nearest‐neighbor distance d (Å), but fall on different straight lines according to the ionic charge product of the compounds. A fairly good agreement has been found between the observed and calculated values of the lattice energy for AIIIBV and AIIBVI semiconductors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Lattice energy and electronic polarizability of binary tetrahedral semiconductors

Cited by 17 publications

References 22 publications

Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Lattice energy of zinc blende (A^IIIB^V and A^IIB^VI) solids

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Lattice energy and electronic polarizability of binary tetrahedral semiconductors

Cited by 17 publications

References 22 publications

Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Dependence of Physical Parameters of Compound Semiconductors on Refractive Index

Simplistic Theoretical Model for Optoelectronic Properties of Compound Semiconductors

Lattice energy of zinc blende (AIIIBV and AIIBVI) solids

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Product

Resources

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Lattice energy of zinc blende (A^IIIB^V and A^IIB^VI) solids