Lattice imaging of faulted dipoles in silicon

Spence, J. C. H.; Kolar, H. R.

doi:10.1080/01418617908239275

Cited by 42 publications

(5 citation statements)

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“…HRTEM has so far contributed mainly to studies of extended defects in semiconductors. Various types of extended defects, i.e., dislocations (Anstis et al, 1981;Chiang et al, 1980;Sato et al, 1980;Spence and Kolar, 1979), stacking fault tetrahedra (Coene et al, 1985), interfaces between two different semiconducting crystals (Ichinose et al, 1987;Ikarashi et al, 1994;Ourmazd et al, 1993), and grain boundaries (Bourret and Desseaux, 1979;Krivanek et al, 1977) have been examined in detail. They are to some extent similar to those in other materials such as metallic alloys, but characteristic in many cases; they exhibit the bond topology that is governed by the general nature of covalent bonding and occasionally different from the parent diamond lattice.…”

Section: Introductionmentioning

confidence: 99%

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Takeda

1998

Microsc. Res. Tech.

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Recent structural studies of point‐defect‐agglomerates in Si and Ge by high‐resolution transmission electron microscopy (HRTEM) are compiled along with some new results. After examining the wave nature of incident electrons on defect formation during HRTEM observation and the correlated recombination of point defects under electron irradiation, we show that HRTEM is the unique means to analyze the atomic structure of small agglomerates of point defects, nanometer in size, inside a crystal. Emphasis is placed on the extension of studies made possible only by the elaborate and crucial structure determination by HRTEM: the mechanism of agglomeration at the atomic level, the extraction of novel unit structures of point defects, and the electronic structure of the agglomerate. Some examples on the subjects are demonstrated in cases of the {113} and {001} defects. The effect of specimen surfaces on structure determination is also discussed. Finally, a development of TEM technique with in‐situ optical spectroscopy is described, which is utilized to pursue interaction of point defects under electron irradiation and thus may reinforce HRTEM experiments. Microsc. Res. Tech. 40:313–335, 1998. © 1998 Wiley‐Liss, Inc.

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Section: Introductionmentioning

confidence: 99%

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Takeda

1998

Microsc. Res. Tech.

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“…High resolution electron microscopy (HREM), in addition to scanning tunneling microscopy and Z-contrast imaging in scanning transmission electron microscopy, is a valuable technique which enables structural information on defects in real space to be ascertained on the atomic scale. The atomic arrangements in the vicinity of structural defects within semiconductors have been determined from projected end-on images [5][6][7][8][9]. To date, there have been several detailed quantitative reports of atom positions and displacements around such defects using HREM [10][11][12][13].…”

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confidence: 99%

Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs

et al. 1998

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Atom positions and local structure around the central stacking fault of a Z-shape faulted dipole within deformed GaAs have been evaluated numerically, for the first time, through high resolution electron microscopic analysis. From comparison with the numerical image computation, the stacking fault is found to generate large local atomic displacements and exhibits a different structure from that of the intrinsic stacking fault of a dissociated dislocation considered so far. The atomic arrangement on and around the stacking fault is discussed. [S0031-9007(98)07937-X]

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“…Notably, two distinct defect structures are observed in the pure fcc domain near the domain boundary: the pure fcc domain in region R1 (Figure 4b) exhibits three intrinsic SFs (white arrows) with multiple SFs (yellow arrows) lying on the (111) planes parallel to the domain boundary, while the pure fcc domain in region R2 (Figure 4c) exhibits other SFs intersecting the intrinsic SFs at 70.5°, forming a Z‐shaped faulted dipole. [ 37,38 ] However, the interiors of the hcp domains (bottom) shown in the R1 and R2 regions are free of defects. Higher‐magnification TEM images (Figure 4d,e), obtained from the boxed regions denoted as M and N in Figure 4b,c demonstrate more clearly that dislocation cores [ 39 ] (cyan arrows in Figure 4e) in the Z‐shaped faulted dipole are formed at the intersections of the three intrinsic SFs 1 on the (111) plane and the one extrinsic SF 2 on the (−1−11) plane.…”

Section: Resultsmentioning

confidence: 99%

Strain‐Induced Modulation of Localized Surface Plasmon Resonance in Ultrathin Hexagonal Gold Nanoplates

et al. 2021

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Anisotropic gold nanoplates (NPLs) have raised the interesting possibility that their reduced geometrical symmetry allows fine tuning of their optical properties associated with the excitation of localized surface plasmon resonances (LSPRs). Recent developments have greatly improved LSPR tunability by utilizing the spatial distribution of LSPR modes. However, the nanoscale interplay between defect‐induced mechanical strain and the spatial variation of LSPR modes remains poorly understood. In this work, the combination of high spatial‐ and spectral‐resolution mapping of LSPR modes and nanoscale strain mapping using aberration‐corrected transmission electron microscopy are applied to investigate the nanoscale distribution of LSPR modes in an ultrathin single hexagonal gold NPL and the effect of defect‐induced strains on its LSPR properties. The electron energy‐loss spectral maps reveal four distinct LSPR components and intensity distributions of all LSPR modes in a hexagonal gold NPL. Furthermore, the strain maps provide experimental evidence that the tensile strain field induced by a Z‐shaped faulted dipole is responsible for the asymmetric distribution of LSPR intensity in a hexagonal gold NPL.

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Lattice imaging of faulted dipoles in silicon

Cited by 42 publications

References 10 publications

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy

Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs

Strain‐Induced Modulation of Localized Surface Plasmon Resonance in Ultrathin Hexagonal Gold Nanoplates

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