Lattice location and annealing behaviour of helium atoms implanted in uranium dioxide single crystals

Belhabib, Taieb; Desgardin, P.; Sauvage, Thierry; Erramli, H.; Barthe, M.F.; Garrido, F.; Carlot, G.; Nowicki, Ł.; Garcia, Philippe

doi:10.1016/j.jnucmat.2015.09.001

Cited by 10 publications

(7 citation statements)

References 23 publications

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“…Displacement energies of 20 and 40 eV for O and U atoms have been used [27]. As shown in Figure 1, the maximal damage values are 0.5 and 0.2 dpa for 60 keV 4 He and 500 keV 3 He ions respectively. Note that the thickness of the damaged layer (which is quite close to the strained one [20]) is about 0.3 µm for 60 keV He implantations but much larger for 500 keV He ion implantation.…”

Section: A Sample Preparation and Ion Implantationsmentioning

confidence: 99%

“…The behavior of He in UO 2 has been extensively analyzed mainly in the frame of long-term disposal of spent nuclear fuel, where helium is produced by the alpha-decay of actinides produced during in-pile irradiation [1]- [3]. Such studies have included many aspects: He behavior (lattice location [4], diffusion and precipitation [5]- [7] [8]) but also created defect [9] and the induced strains in the UO 2 matrix [10]. Different approaches have been used to produce relevant samples: aging of UO 2 samples doped with short -lived α-emitters [7][8] [11]- [15], infusion [16], or ion implantation [1] [5].…”

Section: Introductionmentioning

confidence: 99%

“…A wide range of experimental conditions is investigated; this includes different annealing types (iso-thermal or iso-chronal), conditions (temperature, durations) and atmospheres (vacuum, or He/H 2 ). Moreover these studies are performed on UO 2 polycrystals implanted with two kinds of He ions: either 60 keV 4 He or 500 keV 3 He ions. The first ion energy offers the possibility to work on implanted layers with a well-defined mechanical behavior at room temperature and which present a simple in-depth strain profile [17] [20] [18].…”

Section: Introductionmentioning

confidence: 99%

“…Calculated He concentration and damage profiles resulting from a 60 keV4 He + and 500 keV3 He + ion implantations into UO 2 polycrystals (at a fluence of 10 16 ions/cm²).…”

mentioning

confidence: 99%

“…He 500 keV 1016 ions/cm² -damages3 He 500 keV 1016 ions/cm² -concentration4 He 60 keV 10 16 ions/cm² -damages4 He 60 keV 10 16 ions/cm² -concentration…”

mentioning

confidence: 99%

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Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study

Palancher

Kachnaoui

Martin

et al. 2016

Journal of Nuclear Materials

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Within the frame of the long-term evolution of spent nuclear fuel in dry disposal, the behavior of He in UO 2 polycrystals has to be studied. In this paper, strain relaxation in He implanted samples have been characterized using in-situ X-ray diffraction during thermal annealing. The influence of a wide range of experimental parameters (annealing atmosphere, He ion energy, orientation of the UO 2 grains probed by X-rays) has been evaluated. If each of them contributes to the strain relaxation kinetics in the implanted layer, strain relaxation is not completed for temperatures below 900 °C which is equivalent to what has been found on He implanted UO 2 single crystals, or aged UO 2 pellets doped with α-emitters. This stands for an additional evidence of the interest of ion implantation to simulate self-irradiation in spent nuclear fuel. Moreover, in the case of implantation with 500 keV He ions, we clearly show that strain relaxation and He release are not correlated for temperatures below 750 °C and demonstrate that this applied in-situ approach is well-suited for measuring strains in ion implanted polycrystals.

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Section: A Sample Preparation and Ion Implantationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Calculated He concentration and damage profiles resulting from a 60 keV4 He + and 500 keV3 He + ion implantations into UO 2 polycrystals (at a fluence of 10 16 ions/cm²).…”

mentioning

confidence: 99%

“…He 500 keV 1016 ions/cm² -damages3 He 500 keV 1016 ions/cm² -concentration4 He 60 keV 10 16 ions/cm² -damages4 He 60 keV 10 16 ions/cm² -concentration…”

mentioning

confidence: 99%

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Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study

Palancher

Kachnaoui

Martin

et al. 2016

Journal of Nuclear Materials

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Charged Particle Activation Analysis: Applications

Erramli

Bounagui

2017

Encyclopedia of Analytical Chemistry

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Radioactivation methods in general are essential for trace analysis because of their accuracy; among these methods, charged particle activation analysis (CPAA) is especially suitable for the determination of light elements such as boron, carbon, nitrogen, and oxygen at trace levels in materials. CPAA can also be used advantageously for other heavier elements, if needed, and sometimes be a complement to neutron activation analysis, or even competes with it. The CPAA is the best reference method because of its high sensitivity and selectivity. It permits the determination of the total concentration, regardless of the chemical state. The surface contamination can be eliminated by etching after irradiation, and absolute concentrations can be obtained by direct comparison with known compounds. There are no matrix effects and no need for reference samples. In this article, we have described and discussed, in more detail, the principle and some applications of CPAA. Examples are given of typical applications of CPAA technique such as the study of the oxygen profiling in Czochralski‐silicon (Cz‐Si) substrates submitted to a rapid thermal annealing (RTA) and the study of the oxygen behavior in thermally treated Cz‐Si by combining CPAA with ion channeling. Helium behavior in irradiated UO 2 is an important role in the mechanical stability of nuclear fuels during and after its use in nuclear power plants. Helium migration mechanisms in bulk uranium dioxide (UO 2 ) have already been the subject of theoretical studies, but there is a lack of experimental data relating to the most stable location in the crystal. The question of the helium behavior in silicon carbide 6H–SiC single crystals has been studied at the atomic scale by numerical simulations, but no experiment has been carried out to assess the results hitherto. The measurements have shown that a portion of the He is located in the interstitial tetrahedral sites as predicted by the numerical simulations.

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Behaviour and Properties of Nuclear Fuels

Konings

Bertolus

2018

Experimental and Theoretical Approaches to Actinide Chemistry

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Lattice location and annealing behaviour of helium atoms implanted in uranium dioxide single crystals

Cited by 10 publications

References 23 publications

Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study

Strain relaxation in He implanted UO2 polycrystals under thermal treatment: An in situ XRD study

Charged Particle Activation Analysis: Applications

Behaviour and Properties of Nuclear Fuels

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