Oxide-Based Materials and Devices 2010
DOI: 10.1117/12.846097
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Lattice location of the group V elements Sb, As, and P in ZnO

Abstract: Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes 124 Sb, 73As and 33 P and it is found that they preferentially oc… Show more

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