Lattice location study of low-fluence ion-implanted 124In in 3C-SiC

Abstract

We report on the lattice location of low-fluence ion implanted 124In in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4 × 1012 cm−2, 60(9)% of the In atoms were found slightly displaced (0.12–0.20 Å) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 °C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.

Absorption enhancement in visible range from Fano resonant silicon nanoparticle arrays embedded in single crystal Mg:Er:LiNbO3 synthesized by direct ion implantation

“…During the ion implantation process, the interactions between implanted ions and target atoms can generate a sequence of atomic displacements due to the energy transfer from the implanted ions to the target atoms [11,12]. Typical defect produced in this process is vacancy-interstitial defect which is called Frenkel pair [13,14].…”