Lattice parameter dependence versus composition in semiconductor alloys: the InGaAs case

Ferrari, C.; Villaggi, E.; Armani, N.; Carta, Giovanni; Rossetto, G.

doi:10.1557/proc-677-aa4.1

Cited by 2 publications

(4 citation statements)

References 18 publications

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“…Measurements were done in a symmetric (004) and two asymmetric (224 and -2-24) reflections with sample positioned at 0 º, 90 °, 180 ° and 270 ° with respect to its main crystallographic axes (the calculations followed Vegard's law, which is a standard method for calculating alloy composition and strain in partially relaxed III-V materials, see e.g., Ref. 23,24,25,26). Details regarding all discussed samples are summarized in Table 1.…”

Section: Methodsmentioning

confidence: 99%

“…The assessment of composition and the strain in the layers was made according to measurements of Reciprocal Space Maps (RSM) obtained by high resolution X-ray diffraction measurements (HRXRD). Measurements were done in a symmetric (004) and two asymmetric (224 and −2–24) reflections with sample positioned at 0°, 90°, 180° and 270° with respect to its main crystallographic axes (the calculations followed Vegard’s law, which is a standard method for calculating alloy composition and strain in partially relaxed III–V materials, see e.g., refs − ). Details regarding all discussed samples are summarized in Table .…”

Section: Methodsmentioning

confidence: 99%

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Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Gocalinska

Manganaro

Pelucchi

2016

Crystal Growth & Design

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We present a selection of stack designs for MOVPE grown In x Ga 1−x As metamorphic buffer layers following various convex-down compositional continuous gradients of the In content, showing that defect generation and strain can be managed in a variety of ways, some rather unexpected (and unreported). Indeed, we observe that it is possible to grow surprisingly thick tensile strained layers on metamorphic substrates, without significant relaxation and defect generation. We believe our findings give significant insights to the investigation of strain, relaxation, and defect distribution in metamorphic buffer design, so to obtain properly engineered/tailored structures (the most successful ones already finding applications in device growth).

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Gocalinska

Manganaro

Pelucchi

2016

Crystal Growth & Design

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“…GaAs substrate, the epitaxial layers consist of a 5000-Å In x Al 1- where a sc /a ch are the lattice constants of the Schottky-contact layer/channel. The lattice constant of the In x Ga 1-x As compound can be approximated by 25 a I nGa As = 5.6533 + 0.4051 · x (Å). [2] As compared to the lattice-matched In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructure, the In compositions of the InGaAs channels are devised to be 0.63 and 0.41 to manifest the strain effects.…”

Section: Materials Growth and Device Fabricationmentioning

confidence: 99%

“…where a sc /a ch are the lattice constants of the Schottky-contact layer/channel. The lattice constant of the In x Ga 1-x As compound can be approximated by 25 a I nGa As = 5.6533 + 0.4051 • x (Å).…”

Section: Materials Growth and Device Fabricationmentioning

confidence: 99%

Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures

Lee

Yeh

Hsu

et al. 2014

ECS J. Solid State Sci. Technol.

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Comparative studies of double δ-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H 2 O 2 oxidization technique. The tensile (compressive)-strained channel is devised by the In 0.52 Al 0.48 As/In 0.41 Ga 0.59 As (In 0.52 Al 0.48 As/In 0.63 Ga 0.37 As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionizationrelated kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOS-MHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (g m ), current drive, intrinsic voltage gain (A V ), and power performance. InAlAs/InGaAs MHEMTs have demonstrated advantages of large wafer-size and high electron mobility with respect to pseudomorphic high electron mobility transistors (pHEMTs) 1,2 and latticematched HEMTs on InP substrates. 3,4 It is because that the In-rich InGaAs channel can be grown on a robust GaAs substrate by the graded In x Al 1-x As metamorphic buffer (MB) design. Nevertheless, the impact-ionization-related kink effect 5 usually occurs in MHEMTs. This would seriously degrade gate leakage current, static power dissipation, and power-added efficiency (P.A.E.). Studies of strain engineering in the III-V research field have been made. 6,7 Channel engineering has been applied to form tensile-strained or compressivestrained HEMTs.8 The tensile-strained channel design has also been successfully used to effectively improve the carrier mobility in Sibased devices. A simple and cost-effective H 2 O 2 oxidization technique has been proposed in our previous work. 24 Therefore, this work investigates double δ-doped InAlAs/InGaAs MOS-MHEMTs based on strain engineering of the AlGaAs/InGaAs heterostructure and MOS-gate design by using the cost-effective H 2 O 2 oxidization method. Surface and interfacial property of the MOS-gate structure are studied by using AFM and LFN spectra. Device characteristics with respect to different strain mechanisms and Schottky/MOS-gate structures are physically investigated. Material Growth and Device FabricationThe schematic device structures of the studied InAlAs/InGaAs MHEMTs and MOS-MHEMTs grown by a MBE system are shown in Figs. 1a-1d. Upon the semi-insulating (S.I.) GaAs substrate, the epitaxial layers consist of a 5000-Å In x Al 1-x As MB layer, a 1500-Å undoped In 0.52 Al 0.48 As buffer, a Si δ-doped (n + = where a sc /a ch are the lattice constants of the Schottky-contact layer/channel. The lattice constant of the In x Ga 1-x As compound can be approximated by 25 a I nGa As = ...

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Lattice parameter dependence versus composition in semiconductor alloys: the InGaAs case

Cited by 2 publications

References 18 publications

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Unexpected Aspects of Strain Relaxation and Compensation in InGaAs Metamorphic Structures Grown by MOVPE

Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures

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