1986
DOI: 10.1111/j.1151-2916.1986.tb04741.x
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Lattice Parameters and Density for Y2O3‐Stabilized ZrO2

Abstract: Lattice parameter and density data were compiled for Y2O3‐Stabilized ZrO2, both from the literature and from experimental measurements. The data are described very well over a wide range of composition by the model of Aleksandrov et al., which assumes Y substitution for Zr in the unit cell with compensating anion vacancies. Effects are noted in two‐phase cubic‐tetragonal materials which indicate significant lattice strains in the two‐phase materials.

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Cited by 366 publications
(164 citation statements)
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“…This indicates that the theoretical volume vacancy concentration for YSZ thin films has been found to be N 0 = 1.2·10 29 m −3 . Assuming γl 2 = 0.35a 2 [1,8], the concentration of mobile charge carriers N , diffusion coefficient D v , and mobility of oxygen vacancies µ from relations, and the relaxation frequency of the migration processes f b of charge carriers can be calculated. The values of N , D v , µ, σ b , and f b of charge carriers for YSZ thin films deposited at different technological parameters (P , e-beam gun power, and T s , substrate temperature during the deposition) at temperature T = 578 K are summarized in Table 2.…”
Section: Technological Parametersmentioning
confidence: 99%
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“…This indicates that the theoretical volume vacancy concentration for YSZ thin films has been found to be N 0 = 1.2·10 29 m −3 . Assuming γl 2 = 0.35a 2 [1,8], the concentration of mobile charge carriers N , diffusion coefficient D v , and mobility of oxygen vacancies µ from relations, and the relaxation frequency of the migration processes f b of charge carriers can be calculated. The values of N , D v , µ, σ b , and f b of charge carriers for YSZ thin films deposited at different technological parameters (P , e-beam gun power, and T s , substrate temperature during the deposition) at temperature T = 578 K are summarized in Table 2.…”
Section: Technological Parametersmentioning
confidence: 99%
“…It is known that ZrO 2 stabilized by 8 mol% Y 2 O 3 (YSZ) belongs to cubic symmetry with the lattice parameter a = 0.5137 nm [1] and has maximum value of ionic conductivity, as well as good chemical and thermal stability. The total ionic conductivity σ t of YSZ ceramics was found to be 2.5·10 −2 S/m at the temperature T = 800 K and their activation energy was ∆E t = 1.04 eV [2].…”
Section: Introductionmentioning
confidence: 99%
“…8). O modelo foi testado para soluções sólidas de zircônia contendo óxido de ítrio numa ampla faixa de composições [8,14] e os resultados apresentaram boa concordância com dados compilados da literatura para esta solução sólida. Entretanto, a equação proposta não leva em consideração a presença de vacâncias de oxigênio decorrentes da dopagem.…”
Section: Introductionunclassified
“…Entretanto, a equação proposta não leva em consideração a presença de vacâncias de oxigênio decorrentes da dopagem. Além disso, em ambos casos [8,14] foi utilizada uma série arbitrária de raios iônicos, isto é, valores dos raios do cátion e do ânion para um número de coordenação igual a 6.…”
Section: Introductionunclassified
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