Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Abstract

The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

Optimizing the Synthetic Conditions of “Green” Colloidal AgBiS2 Nanocrystals Using a Low-Cost Sulfur Source

“…This indicates that colloidal AgBiS 2 NCs can be successfully prepared by using OLA–S as the sulfur source. For NC materials, the broadening of XRD peaks can be roughly attributed to the size effect of NCs and lattice strain, which is closely related to defects in the NCs [ 48 ]. The lattice strains in TMS–based and OLA–S–based colloidal AgBiS 2 NCs were calculated using the Williams–Hall plot method [ 49 ], with the results shown in Figure S1 and the corresponding Table S1 .…”

Mechanochemical Synthesis of TiO2-CeO2 Mixed Oxides Utilized as a Screen-Printed Sensing Material for Oxygen Sensor

“…The most prominent reflection of the mixed oxides tended to increase the full width at half maximum (FWHM) compared to the peaks of the pure components. The broadening of diffraction peaks is a measure of deviation from the ideal crystal structure, such as the final crystallite size, and lattice strain arising from increased dislocations and two-dimensional lattice defects [ 39 , 40 ]. Increasing the milling time led to a further broadening of reflection peaks and a weakening of its intensity, indicating a reduction in crystallite size and a decrease in the amount of the corresponding phase [ 26 ].…”

Synthesis of cerium aluminate by the mechanical activation of aluminum and ceria precursors and firing in controlled atmospheres

“…Samples were collected after different milling times and characterized by X-ray diffraction (XRD) using a PANalytical X'Pert PRO MRD diffractometer (CuK α radiation) to monitor structural changes and conversion of reactant powders achieved by mechanical activation. The effect of milling on structural changes of the CeO 2 phase was analyzed by the Williamson-Hall method, 20 as proposed by others for different materials, such as zirconia 21 or ceria 22 :…”

“…Samples were collected after different milling times and characterized by X‐ray diffraction (XRD) using a PANalytical X'Pert PRO MRD diffractometer (Cu K α radiation) to monitor structural changes and conversion of reactant powders achieved by mechanical activation. The effect of milling on structural changes of the CeO 2 phase was analyzed by the Williamson–Hall method, 20 as proposed by others for different materials, such as zirconia 21 or ceria 22 : $$$$\begin{equation}\beta cos\theta \approx \frac{\lambda }{D} + 4 \varepsilon sin\theta \end{equation}$$$$where θ is the Bragg angle, β is the corresponding full weight at half maximum, λ is the wavelength, D is the mean apparent crystallite size, and ε is the lattice strain. Equation () yields the crystallite size from the intercept and lattice strain from the slope of the corresponding plot.…”