Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

Moulet, Caroline; Goorsky, Mark S.

doi:10.5772/38713

Cited by 8 publications

(18 citation statements)

References 38 publications

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“…Compared with the virgin GaSb, the implanted GaSb sample presents additional scattered intensity for angles lower than the Bragg angle, indicating that there is an out-of-plane tensile strain introduced by ion implantation. [21] As reported early , the most distant fringe from the Bragg angle corresponds to the maximum strain in the GaSb sample. [21] With the temperature increasing, the additional scattered intensity decreases gradually until it disappears completely at 130 • C. It indicates that the increase in the annealing temperature promotes the evolution of defects, resulting in the release of strain.…”

Section: Resultsmentioning

confidence: 64%

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Liu¹,

Lin²,

Shen³

et al. 2022

Chinese Phys. B

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Integration of the high-quality GaSb layer on the Si substrate is significant to improve the GaSb application in optoelectronic integration. In this work, the suitable ion implantation fluence of 5×1016 cm-2 H ions for GaSb layer transfer was confirmed. Combined with the strain change and the defect evolution, the blistering and exfoliation processes of GaSb during annealing was revealed in detail. With the direct wafer bonding, the GaSb layer was successfully transferred onto (100) Si substrate covered by 500-nm thickness thermal oxide SiO2 layer. After the post-annealing at 200 ℃, the GaSb layer showed high crystalline quality with only 77 arcsec for the full width at half maximum (FWHM) of the X-ray rocking curve (XRC).

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Section: Resultsmentioning

confidence: 64%

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Liu¹,

Lin²,

Shen³

et al. 2022

Chinese Phys. B

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“…2a, b show the 2θ/ω XRD curves with different annealing temperatures along the GaAs (004) reflection. In comparison with the XRD curve of the virgin GaAs bulk wafer, additional scattered intensity with a fringe pattern for the angles lower than the Bragg's angle appears in both implanted GaAs samples, indicating that an extra out-ofplane tensile strain was introduced by the ion implantation [18]. The most distant fringe from the Bragg's angle corresponds to the maximum strain in the implanted GaAs samples.…”

Section: Resultsmentioning

confidence: 91%

Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

et al. 2022

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Heterogeneous integration of single-crystalline GaAs thin film on a Si substrate provides a promising material platform for Si-based optoelectronic integration. In this work, based on the clarified splitting mechanism of GaAs, the ion implantation conditions for GaAs film transfer were optimized. It was found that the co-implantation of He and H ions is more efficient in exfoliating the GaAs thin film with a lower thermal budget and lower density of defects in comparison with the case of the single He/H ion implantation. With the Al 2 O 3 as the bonding intermediate layer, a 4-inch GaAs film was successfully transferred onto the Si (100) substrate via the optimized ion-slicing technique. The surface treatments, including chemical mechanical polishing, ozone oxidation, and KOH cleaning, were explored to improve the surface quality of the as-transferred GaAs thin film to the level of epi-ready. After post-annealing at 400°C for 1 h, the quality of the transferred GaAs thin film was further improved with only 89.03 arcsec for the full width at half maximum of the X-ray rocking curve.

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“…We calculated the strain value by using the formula

ε = (a_{1} - a_{0}) / a_{0}

where

a_{0}

is the lattice parameter of (006) plane calculated by the diffraction peak in origin sample spectrum using Bragg equation, and

a_{1}

is the most strained lattice parameter calculated by the lowest diffraction peak position of fringes. [ 33,34 ] The strain calculated from XRD spectra is shown in Figure 4 and it increases with fluence and the maximum strain reached 1.27% in 1 × 10 17 ions cm −2 fluence sample.…”

Section: Resultsmentioning

confidence: 99%

Ion Implantation Caused Defects and Their Effects on LiTaO₃ Crystal Exfoliation

Zhang

Luo

Zeng

et al. 2022

Physica Status Solidi (a)

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Counting on its remarkable electro‐optical, pyroelectric, and piezoelectric properties, lithium tantalate (LT) has been applied in optical modulator, infrared sensors, and other devices. LT thin film with different crystal orientation is necessary for different applications and crystal ion slicing technology has fabricated single‐crystalline LT film successfully. During crystal ion slicing, the relation of defects and implantation ions is crucial for film fabrication. Comprehensive and nondestructive method is a good choice to figure out the relation and have a guide in crafting process. Z‐cut LT crystal wafers implanted with different H‐ion fluences are investigated in this research. Optical spectra, Raman spectra, and X‐ray diffraction spectra are measured, corresponding to the thermal annealing exfoliation experiment, to analyze the interactive of implantation, defects, and exfoliation. Based on the results and analysis, oxygen vacancies and H‐ion interstitials affect the crystal lattice and behave as strain increase in lattice. Strain increase contributes to the activation energy decrease and once the decreases to a limit value, exfoliation is able to happen. Depending on this analysis method, a direction to optimize exfoliation of H‐ion implanted LT has been found. Moreover, this method can also be used by optimizing crystal ion slicing technology in other materials.

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Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

Cited by 8 publications

References 38 publications

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

Ion Implantation Caused Defects and Their Effects on LiTaO₃ Crystal Exfoliation

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Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

Cited by 8 publications

References 38 publications

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique

Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

Ion Implantation Caused Defects and Their Effects on LiTaO3 Crystal Exfoliation

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Ion Implantation Caused Defects and Their Effects on LiTaO₃ Crystal Exfoliation