High-quality Nb (110) thin films with residual resistance ratios up to 60 and critical temperatures T c ≈ 9.27 K have been prepared by conventional dc-magnetron sputtering on α-Al 2 O 3 by careful selection of the sputtering conditions. This allowed for a systematic study of the influence of the growth rate on the structural quality and the superconducting properties of the films. The optimized growth conditions were revealed at the substrate temperature T s = 850°C, Ar pressure P s = 0.4 Pa, and the growth rate g ≃ 0.5 nm/s. The results of the films' structural characterization by X-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy are presented. In terms of the electron mean free path l and the superconducting coherence length ξ, deduced from the magneto-resistivity data, the clean superconducting limit (l > ξ) is realized in the high-purity films. For comparison, in impure Nb films sputtered at room temperature while keeping the rest of the sputtering parameters unvaried, the opposite dirty limit (ξ ≳ l) ensues. The merits of these findings are discussed in the context of the demands of present-day fluxonics devices regarding the normal-state and flux-flow properties of superconducting films they are made of.