Lattice thermal expansion for normal tetrahedral compound semiconductors

Omar, M. S.

doi:10.1016/j.materresbull.2006.05.031

Cited by 42 publications

(24 citation statements)

References 14 publications

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“…The volume related to the diamond structure can be obtained by dividing the actual calculated unit cell for the compounds under investigation by Z, which is, for example, 6 for γ -hexagonal and 3 for rhombohedral. The calculated volume per lattice is then multiplied by 8 to have the corresponding volume for the diamond-like cubic structure [14,16]. The results of these calculations are shown in the last column of Table 1.…”

Section: Methods Of Calculation and Analysismentioning

confidence: 99%

“…1, there are points with a large deviation from the fitting curve in comparison with those reported for compounds that belong to groups IV, III-V, II-VI, and the ternary reported in Refs. [14] and [15]. The difference is that many of the compounds from group III 2 -VI 3 have structure changes during their heating.…”

Section: Methods Of Calculation and Analysismentioning

confidence: 99%

“…Values of D for a certain group of semiconductors give a suggestion of the degree of stability for the crystal structure of compounds as well as their preparation simplicity [14,15]. According to this standard, the value of D for III 2 -VI 3 which is 0.02281 indicates that compounds from this group are more stable and easier in their preparation, especially as a single crystal than those that have D values higher than 0.02281 [14,15].…”

Section: Methods Of Calculation and Analysismentioning

confidence: 99%

“…In this work, attempts will be made to extend the model for calculating the lattice thermal expansion originally modified by Omar [14,15] for normal tetrahedral compound semiconductors to be applicable for the binary defect tetrahedral compounds group III 2 -VI 3 and their alloys.…”

Section: Introductionmentioning

confidence: 99%

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Lattice Thermal Expansion and Ionicity for III2–VI3 Binary Defect Tetrahedral Compound Semiconductors and Their Alloys

Omar

2010

Int J Thermophys

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A model for calculating the lattice thermal expansion is modified to be applicable to binary defect tetrahedral compounds that belong to the III 2 -VI 3 group. The number of valence electrons for the expected missing atom as a vacancy is used to correlate the deviations caused by the ionicity of this group of compounds. The ionicity effects which are due to the different numbers between vacancy atom types, which in this case is the group III element, and the element itself, were also added to the correlation equation. In general, the lattice thermal expansion for a compound semiconductor can be calculated from a relation containing the melting point, the mean atomic distance, and the number of valence electrons for the atoms forming the compound. For compounds that undergo a structural change during heating, the phase transition temperature has the same role as the melting point for calculating the lattice thermal expansion that belongs to the related structure phase. The value of the mean ionicity for this group of compounds is also calculated and found to be equal to 0.416.

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Section: Methods Of Calculation and Analysismentioning

confidence: 99%

Section: Methods Of Calculation and Analysismentioning

confidence: 99%

Section: Methods Of Calculation and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Lattice Thermal Expansion and Ionicity for III2–VI3 Binary Defect Tetrahedral Compound Semiconductors and Their Alloys

Omar

2010

Int J Thermophys

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“…α is the linear thermal expansion and T m is the melting temperature [39] which equals to 3000 K [40]. We have also from [40] that:…”

Section: Volumementioning

confidence: 99%

Thermal dependence of the properties of cubic boron nitride crystal

Mijbil¹,

Abdulsattar²,

Abdul-Lettif³

2011

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Lattice constant, total energy, cohesive energy, bulk modulus, speed of sound (υ), plasmon energy (E pl ), valence charge distribution and energy bands of cubic boron nitride crystal have been calculated and studied as a function of temperature using self-consistent field tight binding method with complete neglect of differential overlap version 2 using 8-atom large unit cell approach. Our results illustrate that the increase of temperature leads to an increase of lattice constant, cohesive energy, and valence charge distribution at the atoms, whereas a decrease is obtained for bulk modulus, energy band widths, valence charge distribution in the intratomic distance, speed of sound, and the plasmon energy. The comparison with experimental and other theoretical results has showed an excellent agreement for the lattice constant, bulk modulus, cohesive energy, speed of sound, plasmon energy value and the valence band, whereas remarkable differences in charge distribution values, and the band gap are found. These differences are common in the results that depend on this type of calculation. Values for conduction band and speed of sound have not been found for comparison. Our relation for E pl -T fails but the υ-T relation is successful.

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An empirical model for bulk modulus and cohesive energy of rocksalt‐, zincblende‐ and chalcopyrite‐structured solids

Verma

2009

Physica Status Solidi (b)

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In this paper we present empirical models for ground‐state properties such as bulk modulus and cohesive energy of rocksalt‐, zincblende‐ and chalcopyrite‐structured solids. The bulk moduli and cohesive energy of these solids exhibit a linear relationship when plotted on a log–log scale versus the nearest‐neighbor distance d (Å), but fall on different straight lines according to the product of valence electrons of the solids. We have applied the proposed relations to alkali halides, alkaline‐earth chalcogenides, binary and ternary tetrahedral semiconductors and found a better agreement with experimental data as compared to the values evaluated by earlier researchers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Lattice thermal expansion for normal tetrahedral compound semiconductors

Cited by 42 publications

References 14 publications

Lattice Thermal Expansion and Ionicity for III2–VI3 Binary Defect Tetrahedral Compound Semiconductors and Their Alloys

Lattice Thermal Expansion and Ionicity for III2–VI3 Binary Defect Tetrahedral Compound Semiconductors and Their Alloys

Thermal dependence of the properties of cubic boron nitride crystal

An empirical model for bulk modulus and cohesive energy of rocksalt‐, zincblende‐ and chalcopyrite‐structured solids

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