Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices

Liu, Jun Fu; Nistorica, Corina; Gory, Igor; Skidmore, George D.; Mantiziba, Fadziso M.; Gnade, Bruce E.

doi:10.1016/j.tsf.2005.06.014

Cited by 14 publications

(5 citation statements)

References 40 publications

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“…It has also been reported that atomic layer deposition (ALD) requires OH groups on the substrate in most ALD processes. [35][36][37][38][39][40] Therefore, the OH groups on the substrate become chemisorption sites, which were also shown in our experiments. Taken together, these previous studies underscore the importance for the presence and absence of OH groups or OR groups on film formation in the thermal CVD processes.…”

Section: Resultssupporting

confidence: 82%

O₃-TEOS CVD Film Formation on Thermal SiO₂Pre-Coated with Ethanol

Sato

Shimogaki

2012

ECS J. Solid State Sci. Technol.

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We previously reported that organic solvent (ethanol) treatment of a film formed by plasma enhanced chemical vapor deposition (PE-CVD) remarkably improved the gap-filling property of O3-tetraethylorthosilicate (O3-TEOS) atmospheric pressure chemical vapor deposition (AP-CVD) film. Based on these results, we concluded that alkoxy (ethoxy) groups, which are generated by ethanol treatment, reduced the adsorptive activities of the sites distributed on the surface, causing a decrease in the sticking probability of vapor-phase species responsible for the deposition. However, an opposite hypothesis has been reported, which proposes that ethoxy groups become adsorption sites. In this study, we offer a counterargument and clarify that ethoxy groups, which were generated by ethanol treatment following light etching using dilute hydrofluoric acid (HF), do not become adsorption sites on the surface of thermally grown silicon dioxide (thermal SiO2) during O3-TEOS film deposition, since the O3-TEOS film was formed at a low deposition rate (DR). A smooth surface and excellent gap-filling into the patterns covered with thermal SiO2 were observed on the O3-TEOS film formation by ethanol treatment. We propose that a degasification step during O3-TEOS film formation or during annealing after the deposition could be closely related to improved surface roughness and gap-filling.

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Section: Resultssupporting

confidence: 82%

O₃-TEOS CVD Film Formation on Thermal SiO₂Pre-Coated with Ethanol

Sato

Shimogaki

2012

ECS J. Solid State Sci. Technol.

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“…The reported values for binding energies 3d 5/2 of hydrous zirconia and 10% yttriastabilized zirconia are 181.8 and 182.7 eV, respectively [17,18]. The ratio of Y to Zr in the sample used in this study was determined by XPS analysis of the Zr clean surface under an ultra-high vacuum (2x10 -8 mbar).…”

Section: Xps Analysismentioning

confidence: 94%

Surface modification of silica-coated zirconia by chemical treatments

Lung¹,

Kukk²,

Hägerth³

et al. 2010

Applied Surface Science

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Zirconia surface modification by various chemical treatments after silica coating by sandblasting was investigated in this study. The surface of silica-coated dental zirconia was hydroxylated by treatment with different acids at room temperature for 4 hr, rinsed with deionized water and air-dried. The modified surfaces were characterized by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Shifts in binding energies for Zr 3d 5/2 and Si 2p peaks were observed after treatment with acids, thereby showing a change in the chemical states of zirconium and silicon on the surface layer of silica-coated zirconia. The XPS analysis revealed that the silica-coated zirconia (SiO 2-ZrO 2) surfaces had changed to hydrous silica-coated zirconia (SiO 2-ZrO 2 •nH 2 O). One-way ANOVA analysis revealed there was significant difference in both surface roughness parameters of silica-coated zirconia after chemical treatments and the surface topography varied depending on the acid treatment.

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“…High hardness [5], high melting-point, excellent chemical inertness [7], low thermal conductivity, ionic conductivity [5], high corrosion resistance, high dielectric constant (j) value [8][9][10] and amphoteric behavior [11] are among the properties, which recommend it as a functional metal oxide. ZrO 2 mainly contains three polymorphs: monoclinic, tetragonal and cubic.…”

Section: Introductionmentioning

confidence: 99%