Layer-Dependent Electronic Structure of Atomically Resolved Two-Dimensional Gallium Selenide Telluride

Azizi, Amin; Antonius, Gabriel; Regan, Emma C.; Eskandari, Rahmatollah; Kahn, Salman; Wang, Feng; Louie, Steven G.; Zettl, Alex

doi:10.1021/acs.nanolett.8b04802

Cited by 16 publications

(16 citation statements)

References 30 publications

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“…The 2D materials offer a potentially lucrative playground for bandgap engineering not only by alloy composition [14] but also by layer number [24].…”

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confidence: 99%

Frustration and Atomic Ordering in a Monolayer Semiconductor Alloy

et al. 2020

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Frustrated interactions can lead to short-range ordering arising from incompatible interactions of fundamental physical quantities with the underlying lattice. The simplest example is the triangular lattice of spins with antiferromagnetic interactions, where the nearest-neighbor spin-spin interactions cannot simultaneously be energy minimized. Here we show that engineering frustrated interactions is a possible route for controlling structural and electronic phenomena in semiconductor alloys. Using aberration-corrected scanning transmission electron microscopy in conjunction with density functional theory calculations, we demonstrate atomic ordering in a two-dimensional semiconductor alloy as a result of the competition between geometrical constraints and nearest-neighbor interactions. Statistical analyses uncover the presence of short-range

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“…The 2D materials offer a potentially lucrative playground for bandgap engineering not only by alloy composition [14] but also by layer number [24].…”

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confidence: 99%

Frustration and Atomic Ordering in a Monolayer Semiconductor Alloy

et al. 2020

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“…This hinders their application due to the increased power consumption. Two-dimensional (2D) materials [13][14][15][16][17][18][19][20] offer extremely high surface-to-volume ratio, layerdependent electronic structure, and tunable active sites for redox reactions, making them attractive candidates for gas sensing applications 11,[21][22][23][24][25] . Graphene 21 and MoS2 22,23 have shown excellent sensitivities toward NO2, but they are not selective and suffer from slow recovery kinetics.…”

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confidence: 99%

High-Performance Atomically-Thin Room-Temperature NO₂ Sensor

et al. 2020

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The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and reversible chemical sensor based on a monolayer of the transition metal dichalcogenide Re0.5Nb0.5S2. The sensing device exhibits thickness dependent carrier type, and upon exposure to NO2 molecules, its electrical resistance considerably increases or decreases depending on the layer number. The sensor is selective to NO2 with only minimal response to other gases such as NH3, CH2O, and CO2. In the presence of humidity, not only are the sensing properties not deteriorated, but also the monolayer sensor shows complete reversibility with fast recovery at room temperature. We present a theoretical analysis of the sensing platform and identify the atomically-sensitive transduction mechanism.

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“…Since there are limited bandgap ranges offered by elemental or binary individual semiconductors; alloying has been the most common approach to expand the bandgap range by controlling the alloy composition (18). In particular, 2D materials provide an ideal platform for bandgap engineering by alloy composition (2) and layer number (4). Here, we demonstrate how the induced atomic ordering can be used as another degree of freedom to tune the alloy band gap.…”

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confidence: 89%