Pressure-induced surface-enhanced Raman spectroscopy
(PI-SERS)
is among the foremost achievements of high-pressure fields, benefiting
from the advantage that pressure-modulated interactions between substrates
and molecules overcome the weakness of individual substrates or molecules.
However, the pressure corresponding to PI-SERS enhancement is currently
still at a low-pressure stage within 8 GPa. Therefore, how to realize
PI-SERS enhancement under higher or ultrahigh pressure remains a huge
challenge. Here, we applied few-layer WS2 (FL-WS2) nanosheets as PI-SERS substrates and selected 4-mercaptobenzoic
acid (4-MBA) molecules with a big energy gap as probes to explore
PI-SERS enhancement in more depth. The experimental results indicate
that the PI-SERS signals increase gradually as pressure increases
and reaches a maximum at 18 GPa, which has set a pressure record for
the PI-SERS field so far. Different from the C exciton resonance-induced
SERS intensities at ambient conditions, the charge-transfer transition
between FL-WS2 and 4-MBA is strengthened via the pressure-induced
increase in the band gap of FL-WS2 and decrease in the
highest-occupied molecular orbital–lowest unoccupied molecular
orbital (HOMO–LUMO) energy gap of 4-MBA, thus enhancing PI-SERS
signals accordingly. Therefore, this strategy will be beneficial for
practical applications in the field of optoelectronics and for the
design of other PI-SERS sensors for trace detection in complex and
extreme environments.