2014
DOI: 10.1380/ejssnt.2014.31
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Layer Dependent Wetting in Parahexaphenyl Thin Film Growth on Graphene

Abstract: In order to exploit graphene (Gr) as a transparent electrode in organic optoelectronics, a profound understanding of molecular wetting and diffusion processes on this material is essential. Properties of Gr like band structure, work function, or elasticity depend significantly on the layer number. Here, we report on Gr layer dependent differences in the growth morphologies of hot wall epitaxy deposited sub-monolayer thin films of the one-dimensional conjugated parahexaphenyl (6P) molecule on exfoliated Gr/SiO2… Show more

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Cited by 8 publications
(30 citation statements)
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References 60 publications
(94 reference statements)
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“…[9][10][11][12][13][14][46][47][48][49][50][51][52][53][54][55][56][57][58] We find that 6P grows in a flat-lying needle-type morphology on CVD MLG transferred to oxidized Si wafers, irrespective of observed PMMA residue levels and MLG defects. This indicates that MLG dominates interface properties even in the case of severe contamination or damage.…”
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confidence: 66%
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“…[9][10][11][12][13][14][46][47][48][49][50][51][52][53][54][55][56][57][58] We find that 6P grows in a flat-lying needle-type morphology on CVD MLG transferred to oxidized Si wafers, irrespective of observed PMMA residue levels and MLG defects. This indicates that MLG dominates interface properties even in the case of severe contamination or damage.…”
mentioning
confidence: 66%
“…Only subsequent to post-transfer H 2 anneals -that remove even minor PMMA residues -extended 6P needle growth is obtained which resembles that observed on clean exfoliated MLG. [12][13][14] We grow MLG by low-pressure CVD on Cu catalysts. 32,33 The as-grown MLG on the Cu is then covered with a PMMA layer, and wet chemical etches are used to release the PMMAcoated MLG from the Cu to subsequently transfer the stack onto SiO 2 (300 nm) covered Si-wafers.…”
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confidence: 99%
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