Layered Architecture for Quantum Computing

Jones, N. Cody; Meter, Rodney Van; Fowler, Austin G.; McMahon, Peter L.; Kim, Jungsang; Ladd, Thaddeus D.; Yamamoto, Yoshihisa

doi:10.1103/physrevx.2.031007

Cited by 289 publications

(370 citation statements)

References 134 publications

(238 reference statements)

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“…Kv, 73.23.Hk, The silicon-based metal-oxide-semiconductor fieldeffect transistor (MOSFET) is a key element of largescale integrated circuits that are at the core of modern technology. Looking into the future, a universal faulttolerant quantum computer also requires a huge number of physical qubits, on the order of 10 8 or more [1,2]. As such, a qubit integrated with the standard Si MOS-FET architecture would be truly attractive from the perspectives of scaling up and leveraging existing technologies.…”

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confidence: 99%

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

et al. 2017

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We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anticrossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.PACS numbers: 73.63. Kv, 73.23.Hk, The silicon-based metal-oxide-semiconductor fieldeffect transistor (MOSFET) is a key element of largescale integrated circuits that are at the core of modern technology. Looking into the future, a universal faulttolerant quantum computer also requires a huge number of physical qubits, on the order of 10 8 or more [1,2]. As such, a qubit integrated with the standard Si MOS-FET architecture would be truly attractive from the perspectives of scaling up and leveraging existing technologies. One example of such a qubit is the spin of an impulity/defect in the channel of a Si MOSFET. Indeed, spin qubits defined in Si nano-devices are not only compatible with current silicon technology, but are also known to be one of the most quantum coherent among known qubit designs [3][4][5][6][7][8][9][10][11][12][13].Although there are many studies of impurities and defects in Si [14], single impurity/defect in the channel of a Si MOSFET has only recently been studied experimentally, by single-electron tunneling [15][16][17][18][19]. Spins of such defects are difficult to characterize because of their weakly-interacting nature. Controlling the spins of impurities in a MOSFET, as well as in a gate-confined quantum dot, can be achieved much more easily in a pchannel MOSFET than an n-channel. The reason is that the larger spin-orbit interaction (SOI) of a hole (-like) spin enables the spin resonance by an oscillatory electric field, instead of a magnetic field, at microwave frequencies under typical sub-Tesla static magnetic fields. Such electrically-driven spin resonance (EDSR) has been demonstrated in III-V devices [20][21][22][23], as well as in Si [24][25][26], while SOI effects in gate-confined Si quantum dots have been investigated in the spin blockade region [27]. However, systematic investigations of EDSR * E-mail address: k-ono@riken.jp † these authors contributed equally to this work under the direct influence of SOI have not been performed in Si, the material that provides an ideal stage for studying SOI due to the minor presence of nuclear spins.In this work we study sub-threshold transport and EDSR in a short p-channel Si MOSFET, and quantitatively reveal the effects of SOI and EDSR on lifting the spin blockade. Specifically, our transport measurements demonstrate that there are two effective dots in the channel, which allow us to identify a spin blockade regime and explore spin reso...

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Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

et al. 2017

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“…A number of proposals exist for a 2-D array of qubits with tunable nearest neighbor interactions [1][2][3][4]. Any 2-D topological quantum error correction code [5][6][7][8][9] and some 3-D codes [10,11] can be mapped with little or no overhead to such hardware.…”

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Analytic asymptotic performance of topological codes

Fowler

2013

Phys. Rev. A

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Topological quantum error correction codes are extremely practical, typically requiring only a 2-D lattice of qubits with tunable nearest neighbor interactions yet tolerating high physical error rates p. It is computationally expensive to simulate the performance of such codes at low p, yet this is a regime we wish to study as low physical error rates lead to low qubit overhead. We present a very general method of analytically estimating the low p performance of the most promising class of topological codes. Our method can handle arbitrary periodic quantum circuits implementing the error detection associated with this class of codes, and arbitrary Pauli error models for each type of quantum gate. Our analytic expressions take only seconds to obtain, versus hundreds of hours to perform equivalent low p simulations.

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“…To develop such technologies in future [15], understanding the consequences of non-ideal behavior is very important. Probabilistic algorithms could therefore have an application to the design of these devices.…”

Section: Discussionmentioning

confidence: 99%

Simulating Bell violations without quantum computers

Drummond¹,

Opanchuk²,

Rosales-Zárate³

et al. 2014

Phys. Scr.

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Abstract. We demonstrate that it is possible to simulate Bell violations using probabilistic methods. A quantum state corresponding to optical experiments that violate the Bell inequality is generated, demonstrating that these quantum paradoxes can indeed be simulated probabilistically. This provides an explicit counter-example to Feynman's claim that such classical simulations could not be carried out.

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Layered Architecture for Quantum Computing

Cited by 289 publications

References 134 publications

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor

Analytic asymptotic performance of topological codes

Simulating Bell violations without quantum computers

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