Layered heteroepitaxial growth of germanium on Si(015) observed by scanning tunneling microscopy

Tomitori, Masahiko; Watanabe, Kentaro; Kobayashi, Masaru; Iwawaki, Fumikazu; Nishikawa, Osamu

doi:10.1016/0039-6028(94)91301-3

Cited by 42 publications

(26 citation statements)

References 11 publications

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“…Our results on the energetics of H adsorption on Ge(105) explain why H suppresses Ge hut formation on Si(001) [4]. We believe our results point to chemisorption as a potentially powerful tool to manipulate the surface energy and strain of Ge and SiGe layers formed on Si substrates [1,5].The atomic-structure model of the Ge105-1 2 ''hut'' facet, proposed by Mo et al to interpret STM images [1] using paired dimers (PD) with nonrebonded S B [6] steps, had been accepted since 1990 [7]. However, recent work shows an energetic advantage of the rebondedstep (RS) structure over the PD structure [8][9][10][11].…”

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confidence: 85%

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Hydrogen-Induced Instability of the Ge(105) Surface

et al. 2005

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The structure and stability of the hydrogen-terminated (105) surface of Ge deposited on Si(105) substrates are investigated by scanning tunneling microscopy (STM). Investigations combining STM, electron energy loss spectroscopy, and theory reveal that Si incorporation into the surface Ge layer of hydrogen-terminated Ge/Si(105) drastically destabilizes the surface. The STM images obtained on this surface are well explained by the recently established rebonded-step structure model.

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confidence: 85%

“…The atomic-structure model of the Ge105-1 2 ''hut'' facet, proposed by Mo et al to interpret STM images [1] using paired dimers (PD) with nonrebonded S B [6] steps, had been accepted since 1990 [7]. However, recent work shows an energetic advantage of the rebondedstep (RS) structure over the PD structure [8][9][10][11].…”

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confidence: 99%

Hydrogen-Induced Instability of the Ge(105) Surface

et al. 2005

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“…The critical thickness is ~ 3-7 monolayers (ML) for Ge on Si(001) 4 whereas it increases up to 10 ML for (015) surface. 5 The 3D islands can be of different shapes like triangular on Si(111) 6 , rectangular on Si(001) (at T s = 700°C) 4 and hut clusters on Si(015). 5 Bimodal distribution of the islands were also observed for the Ge film prepared on Si(001) at a T s of 600°C.…”

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confidence: 99%

“…5 The 3D islands can be of different shapes like triangular on Si(111) 6 , rectangular on Si(001) (at T s = 700°C) 4 and hut clusters on Si(015). 5 Bimodal distribution of the islands were also observed for the Ge film prepared on Si(001) at a T s of 600°C. 1 The strain in the initial layers of Ge have been measured by AFM force measurements on Si(111) 6 and on Si(100).…”

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confidence: 99%

Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

et al. 2003

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Abstract. Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer-Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

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“…In studies of Ge nanocrystals on Si, the topography of nanocrystals and their evolution in size and shape were extensively investigated by various methods such as atomic force microscopy [1], transmission electron microscopy (TEM) [2], low-energy electron microscopy [3], and grazing incidence small angle X-ray scattering [4]. On the other hand, scanning tunneling microscopy (STM) studies [5][6][7] yielded the surface periodic structures of the Ge/Si(1 0 0) nanocrystal including the {1 0 5} facet, which is tilted by a slope angle of 11.3°f rom the substrate plane. However, the steeper the slope angle of facet surfaces, the more difficult in observation of the surface structure of the facets.…”

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confidence: 99%