Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures

Wallace, Trace; Spear, M.; Privat, A.; Neuendank, Jereme; Irumva, G.; Wilson, Dennis; Esqueda, Ivan Sanchez; Barnaby, Hugh; Turowski, Marek; Mikkola, Esko; Hughart, David Russell; Marinella, Matthew; Brunhaver, John; Gutierrez, A.; Niederhausern, R. Von; Holloway, Steven R.; Beltrán, Diego Guevara; Taggart, J. L.

doi:10.1109/tns.2022.3221060

Cited by 6 publications

(2 citation statements)

References 19 publications

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“…The gate stack is formed by ~2 nm of HfO2 (brown), ~6 nm of Al (gray), and a thick layer of Ti (green). Doping profiles in the Si channel have been retrieved from publicly available information and set to 10 16 cm -3 of B in the channel region [26]. All the physics for modelling the semiconductor device are set to the default Silvaco parameter values.…”

Section: Mechanisms Identification and Discussionmentioning

confidence: 99%

“…14(b), positive charge (QSTI = 5×10 17 cm -3 ) is added in the STI, leading to an increase in edensity in the Si regions close to STI sidewalls. These Si regions with high edensity activate two parasitic leakage paths deep in the STI sidewalls, responsible for the increase of Ioff [8], [15], [16], [18], [26]. Fig.…”

Section: Mechanisms Identification and Discussionmentioning

confidence: 99%

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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Bonaldo,

Wallace,

Barnaby

et al. 2024

IEEE Trans. Nucl. Sci.

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We provide comprehensive experimental data and technology computer-aided design simulations to clarify totalionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultra-high doses the transconductance evolution rebounds (increase up to 3-10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. These effects result from positive charge trapping deep in the sidewalls of the shallow trench isolation (STI) and negative trapped-charge accumulation localized in the upper STI corners. Larger sizes of inter-fin STI enhance the leakage current degradation of transistors with smaller numbers of fins. Hydrogen-induced border-trap and/or interface-trap generation at the Si/oxide interface at the STI corners leads to increased low-frequency noise at doses > 10 Mrad(SiO2). These results show that the quality of oxides and interfaces in the upper region of the STI adjacent to the device channel is crucial for the tolerance to ultra-high radiation of modern FinFET technologies.

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Section: Mechanisms Identification and Discussionmentioning

confidence: 99%