LBIC and Reflectance Mapping of Multicrystalline Si Solar Cells

Moralejo, B.; González, M. A.; Jiménez, J.; Parra, Vicente; Martínez, O.; Gutiérrez, J.A.; Charro, O.

doi:10.1007/s11664-010-1174-8

Cited by 30 publications

(20 citation statements)

References 12 publications

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“…The texturizing treatment aims to reduce and homogenize the reflectivity; nevertheless, it must be taken into account if one wants to obtain reliable values for the distribution of L eff . As we have demonstrated in previous works, the reflected light collected in our set-up is strongly dependent on the numerical aperture (NA) of the microscope objective [10,11], demonstrating the importance of the light dispersion with respect to back reflection. A high NA objective would be beneficial for collect as much reflected light as possible.…”

Section: Introductionsupporting

confidence: 63%

Study of the crystal features of mc‐Si PV cells by laser beam induced current (LBIC)

Moralejo¹,

Hortelano²,

González³

et al. 2011

Phys. Status Solidi (c)

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In this work we present LBIC measurements of a set of commercial multicrystalline silicon samples manufac‐tured by different suppliers. The LBIC measurements were obtained with a home‐made system, using several excitation wavelengths, equipped with an autofocus system, and controlling the reflected light. This system keeps constant the distance between the microscope objective and the sample, despite the bowing and the surface roughness characteristic of this type of samples. For the calculation of the Leff maps one needs to consider the distribution of the reflected light, which the maps usually show contrasts corresponding to the different grain orientations. The LBIC maps present networks of dark lines, corresponding to regions with high carrier capture rates. The dark line network does not necessarily match the grain boundaries (GB) revealed in the optical images, but many of them are intragarin defects. The trapping activity of the GB is known to depend on the GB angle. Usually, small angle GBs are decorated with defects that make them electrically active, while the large angles GBs are less decorated, and present a weak electrical activity. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 63%

Study of the crystal features of mc‐Si PV cells by laser beam induced current (LBIC)

Moralejo¹,

Hortelano²,

González³

et al. 2011

Phys. Status Solidi (c)

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“…Various methods such as photoluminescence (PL), 5 electroluminescence (EL), 6 electron beam induced current (EBIC), 7 and laser beam induced current (LBIC) 8 have been used for investigating solar cells. The PL method detects and images luminescence from a solar cell illuminated by light, and it can visualize the distribution of radiative defects and minority carrier lifetime in a solar cell.…”

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confidence: 99%

Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell

et al. 2015

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A laser terahertz emission microscope (LTEM) can be used for noncontact inspection to detect the waveforms of photoinduced terahertz emissions from material devices. In this study, we experimentally compared the performance of LTEM with conventional analysis methods, e.g., electroluminescence (EL), photoluminescence (PL), and laser beam induced current (LBIC), as an inspection method for solar cells. The results showed that LTEM was more sensitive to the characteristics of the depletion layer of the polycrystalline solar cell compared with EL, PL, and LBIC and that it could be used as a complementary tool to the conventional analysis methods for a solar cell.

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“…For this, one collects simultaneously the LBIC and reflected light maps at least for two wavelengths, which permits the calculation of both the external and the internal quantum efficiencies (EQE/IQE) [20]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…A motorized xey stage allows for mapping the LBIC signals over regions of interest as large as 76.6 Â 114.5 mm 2 . Different microscope objectives were used (10Â, 20Â, 50Â and 100Â), which allow for both mapping large areas of the wafers, and also performing very high spatial resolution LBIC maps with the largest magnification objectives [20,21]. The EBIC measurements were carried out on a Raman micro-spectrometer from HoribaeJobin Yvon.…”

Section: Methodsmentioning

confidence: 99%

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Moralejo

Tejero

Hortelano

et al. 2016

Superlattices and Microstructures

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a b s t r a c tMulticristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the minority carrier diffusion length. For this reason, a large effort to characterize the mc-Si material is demanded, aiming to visualize the defective areas and to quantify the type of defects, density and its origin. In this work, several complementary light and electron probe techniques are used for the analysis of both mc-Si wafers and solar cells. These techniques comprise both fast and whole-area detection techniques such as Photoluminescence imaging, and highly spatially resolved time consuming techniques, such as light and electron beam induced current techniques and mRaman spectroscopy. These techniques were applied to the characterization of different mc-Si wafers for solar cells, e.g. ribbon wafers, cast mc-Si as well as quasi-monocrystalline material, upgraded metallurgical mc-Si wafers, and finished solar cells.

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LBIC and Reflectance Mapping of Multicrystalline Si Solar Cells

Cited by 30 publications

References 12 publications

Study of the crystal features of mc‐Si PV cells by laser beam induced current (LBIC)

Study of the crystal features of mc‐Si PV cells by laser beam induced current (LBIC)

Comparison between laser terahertz emission microscope and conventional methods for analysis of polycrystalline silicon solar cell

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

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