Leaching and re-synthesis of CIGS nanocrystallites from spent CIGS targets

Hsiang, Hsing I.; Chiang, Chung Yen; Hsu, Wei Hsiang; Chen, Wei Sheng; Chang, Juu En

doi:10.1016/j.apt.2016.02.012

Cited by 14 publications

(16 citation statements)

References 29 publications

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“…Furthermore, the combination of CA and glucose, as mobilizing agent, allowed promising results, with a yield higher than 70% after 3 hours (Figure F). The use of H 2 O 2 confirmed the mobilizing action, as explained by Hsiang et al, with extraction efficiency higher than 90%, irrespective of the selected acid (Figure C and D). Considering the quantity of factors included in the experimental plan, a variance analysis was carried out, to identify the variables with a significant effect.…”

Section: Resultssupporting

confidence: 80%

“…Hsiang et al explained the leaching mechanism in the presence of H 2 O 2 , but no information about glucose can be found in the literature . Nevertheless, interesting information, useful to hypothesize the glucose action, can be obtained observing the correlations in the molar dissolution of In, Ga, and Cu.…”

Section: Resultsmentioning

confidence: 99%

“…Starting from the results, 6 replicated treatments (Table ) were carried out to test the effect of H 2 SO 4 and CA at different time, possibly combined with 2 different mobilizing agents: H 2 O 2 and glucose. The use of H 2 O 2 allows the action on the Cu (In, Ga)Se 2 structure, with the consequent release of In and Ga ions . Nevertheless, literature reports the negative environmental effect connected with the use of this agent, and the possibility to involve a more sustainable agent with a mobilizing effect could be promising .…”

Section: Methodsmentioning

confidence: 99%

“…Similarly, Hsiang et al apply an autoclave leaching of CIGS powder in H 2 SO 4 solution with the addition of H 2 O 2 as strong oxidant, at 140°C for 4 hours. The treatment directly acts on the Cu (In, Ga)Se 2 structure, which is tetrahedrally bonded semiconductor with a chalcopyrite crystal structure . On the other hand, Gustafsson et al evaluate the possibility of a high temperature chlorination by NH 4 Cl, for the separation of Cu, In, Ga, and high purity Se .…”

Section: Introductionmentioning

confidence: 99%

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End‐of‐life CIGS photovoltaic panel: A source of secondary indium and gallium

Amato

Beolchini

2018

Progress in Photovoltaics

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The photovoltaic market has boomed in the last decade, and it is becoming much richer of high performance technologies. The copper indium gallium selenide (CIGS) panel represents an example of young technology that shows high energy efficiency, kept at extreme weather conditions. Its average lifetime is around 25 years, and a strategy for a convenient recycling should be planned to prevent the future storage of high waste amount. The interest of end‐of‐life CIGS panels is due to their content of critical raw materials, mainly Ga and In, with concentrations around 600 and 90 ppm, respectively, higher than those in the ores. In this context, we tested different leaching agents (H2SO4, HCl, HNO3, citric acid, and NaOH), in the possible presence of a mobilizing agent (H2O2 and glucose), to obtain high‐efficiency metal extraction. Furthermore, to minimize the environmental impact of the process, the experimental activity was combined with the evaluation of the carbon footprint of the experimented options, using the life cycle assessment tool. Overall, the combination of CA and H2O2 appeared the best choice, from both the operative and the sustainability point of view, showing efficiencies higher than 90%, after 1 hour, at 80°C, with a carbon footprint of 0.1‐kg CO2‐eq. The obtained result represents an innovation in the field of end‐of‐life CIGS photovoltaic panel exploitation, and it is the starting point for both secondary In and Ga production, in agreement with the circular economy approach.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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End‐of‐life CIGS photovoltaic panel: A source of secondary indium and gallium

Amato

Beolchini

2018

Progress in Photovoltaics

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“…2) The remaining indium from the bonding layer is removed by placing the target in an HCl bath which dissolves indium but does not react with the CIGS [91]. Recently, leaching of CIGS from a spent target using a sulfate solution together with H 2 O 2 as an oxidant, followed by re-synthesis of CIGS crystallites, has been reported [92], and this could serve as an alternate route to reclamation of CIGS material.…”

Section: B Target Recyclingmentioning

confidence: 99%

Quaternary Sputtered Cu(In,Ga)Se₂Absorbers for Photovoltaics: A Review

Frantz

Myers

Bekele

et al. 2016

IEEE J. Photovoltaics

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Quaternary sputtering is a promising alternative to more established deposition methods for the fabrication of Cu(In,Ga)Se 2 (CIGS) thin films for photovoltaics (PV). In this technique, a single sputtering target containing all four constituents is employed to deposit the CIGS film. Quaternary sputtering offers several advantages over other deposition methods, including excellent uniformity over large areas, high material usage, and less reliance on toxic Se precursors such as H 2 Se. Despite these advantages, several drawbacks remain. To date, devices fabricated by quaternary sputtering without additional selenization have been limited in efficiency to about 11%, and realizing bandgap grading in order to match the performance of the best evaporated devices presents a challenge. We discuss the prospects for quaternary sputtering as a fabrication technique for CIGS and highlight areas of research that may result in improved performance. Target fabrication and usage is reviewed. We also present results for films and devices including data for the optical constants of sputtered CIGS. Some recent previously unpublished results, including a study of impurities in CIGS sputtering targets and the first demonstration of a CIGS device on a flexible glass substrate, are discussed Index Terms-Cu(In,Ga)Se 2 (CIGS), impurities, photovoltaic (PV) cells, sputtering.

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