Lead free CH3NH3SnI3 perovskite thin-film with p-type semiconducting nature and metal-like conductivity

Abstract

Lead free CH3NH3SnI3 perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH3NH3SnI3 film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursor solution. CH3NH3SnI3 films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH3NH3SnI3 can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.

Effect of different device parameters on tin-based perovskite solar cell coupled with In 2 S 3 electron transport layer and CuSCN and Spiro-OMeTAD alternative hole transport layers for high-efficiency performance

“…As PCE is the function of FF, VOC and JSC, it decreased at the higher bandgap of the absorber layer (Mandadapu, Vedanayakam et al 2017). So, the best performance was found at 1.3 eV bandgap for both configurations which was in good agreement with the literature (Iefanova, Adhikari et al 2016, Mandadapu, Vedanayakam et al 2017. (Yu, Zhao et al 2019) and was near the experimental PCE of SLG/ FTO/ In2S3/ MAPbI3/ Spiro-OMeTAD/ Au solar cell that had a PCE of 18.83% (JSC = 22.98 mA/cm 2 , VOC = 1.10 V and FF = 75%) (Xu, Wu et al 2018).…”

“…Electron transport layer (ETL) should have proper band alignment to facilitate electron transport, excellent carrier mobility and wide bandgap (Islam, Jani et al 2020). Usually, titanium oxide (TiO2) is used as ETL in the perovskite solar cells which has limitations due to its high-temperature fabrication, intrinsic slow electron mobility and can cause a disturbance in charge transport (Lee, He et al 2012, Iefanova, Adhikari et al 2016, Anwar, Mahbub et al 2017). Indium sulphide (In2S3) is a suitable replacement of traditional TiO2 as ETL due to its higher carrier mobility, good stability, optimized band structure and enhanced light tapping and also, it can even outperform TiO2 when used in perovskite solar cells (Hou, Chen et al 2017, Xu, Wu et al 2018, Yu, Zhao et al 2019.…”

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

“…5 [15], a thin absorber layer can produce high power conversion efficiency (PCE). It is found from the simulation that a thickness of 600 nm-700 nm would be sufficient enough for almost complete absorption of AM 1.5 G radiation.…”

“…Methylammonium tin triiodide perovskites are thought to be a potential substitute to conventional methylammonium lead triiodide perovskites because it has a direct bandgap of 1.3 eV [15]. Besides, it is earth abundant and free of toxicity.…”

Recent progress toward highly efficient tin‐based perovskite (ASnX3) solar cells

“…[ 40 ] The lone pair of Sn‐5s is thus readily grabbed, which tells a dramatic redox difference between iso‐valent Pb and Sn. [ 41,42 ] The redox potential for Pb 2+ /Pb 4+ and Sn 2+ /Sn 4+ are 1.60 and 0.15 V towards standard hydrogen electrode separately. That's why Sn‐based perovskite materials are vulnerable to oxygen.…”