Lead iodide X-ray detection systems

Shah, K.S.; Olschner, F.; Moy, L.; Bennett, Paul R.; Misra, M.; Zhang, J; Squillante, Michael R.; Lund, J.C.

doi:10.1016/s0168-9002(96)00346-4

Cited by 81 publications

(34 citation statements)

References 8 publications

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“…This led to the study of semiconducting lead halides as potential candidates for X-ray detectors. 76 This feature, combined with the high mobilities and low defect density of organo lead halide perovskites, led to the realization of fast and high gain (over 10 4 carriers per photon) X-ray photodetectors.…”

Section: Metal Halide Perovskite Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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Section: Metal Halide Perovskite Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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“…For example, PbI 2 has been investigated as a stable alternative to HgI 2 since it does not exhibit a destructive phase change between the melting point and room temperature and its density is similar. Unfortunately, while thin detectors yield good room temperature X-ray performance (415 eV FWHM at 5.9 keV and 1.4 keV FWHM at 59.54 keV for a 1 mm 2 device; Shah et al, 1996), their transport properties are so poor that detectors thicknesses are limited to ~200 microns. Therefore, there has been little incentive to develop PbI 2 for gamma-ray applications over say HgI 2 , or even lower Z compounds such as CdZnTe or GaAs.…”

Section: Present Detection Systemsmentioning

confidence: 99%

Semiconductor materials and radiation detection

Owens

2006

J Synchrotron Radiat

129

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While Si and Ge have become detection standards for X-and gamma-ray spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by one or more of their physical limitations; namely the need for ancillary cooling systems or bulky cryogenics, their modest stopping powers and radiation intolerance. Wide band gap compounds offer the ability to operate in a range of chemical, thermal and radiation environments, whilst still maintaining sub-keV spectral resolution at X-ray wavelengths. In addition, these materials encompass such a wide range of physical properties that it is technically feasible to engineer materials to specific applications. However, while compound materials are used routinely in the optical and infrared wavebands, their development at hard X-and gamma-ray wavelengths has been plagued by material and fabrication problems. In this paper we present an overview of suitable materials and review the current progress in producing X-and gamma-ray radiation detectors.

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“…Some X-ray digital imagers have even come to the market already. But, for these applications a phosphor must be used on top of the a-Si:H pixelated active matrix imager [1,2,3]. The phosphor is responsible for the conversion of the X-ray photons into photons with wavelength in the visible range, which in turn are absorbed by the p-i-n a-Si:H photodetector.…”

Section: Introductionmentioning

confidence: 99%

Stoichiometry, surface and structural characterization of lead iodide thin films

Condeles¹,

Lofrano²,

Rosolen³

et al. 2006

Braz. J. Phys.

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In this work we present the structural properties and stoichiometry analysis of thin films of lead iodide (PbI 2 ). This material is a very promising semiconductor material for the development of X-ray detectors in digital medical imaging. An alternative deposition method called Spray Pyrolysis was used. We discuss the main advantages and limitations of the deposition process comparing three different starting material powders. Extra iodine atmosphere during deposition and the effect of post-deposition thermal treatment is also discussed. The structural properties were studied by X-ray diffraction, Atomic Force Microscopy (AFM), Scanning Electronic Microscopy (SEM) and stoichiometry analysis were performed using Energy Dispersive Spectroscopy (EDS).

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Lead iodide X-ray detection systems

Cited by 81 publications

References 8 publications

Solution-processed semiconductors for next-generation photodetectors

Solution-processed semiconductors for next-generation photodetectors

Semiconductor materials and radiation detection

Stoichiometry, surface and structural characterization of lead iodide thin films

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