Lead sulfide; a new candidate for optoelectronics applications in the ultra violet spectral range

Jahromi, Hamed Dehdashti; Moaddeli, Mohammad

doi:10.1088/2053-1591/ab513d

Cited by 11 publications

(2 citation statements)

References 41 publications

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“…Numerous experimental [10,11] and theoretical [12][13][14][15][16][17][18][19][20][21][22][23][24][25] studies have examined the structural, electronic, optical, and thermoelectric properties of these materials using various methods, including tight-binding, Density Functional Theory (DFT), and green function methods. For instance, Lach-hab et al utilized LAPW calculations in both LDA and GGA schemes to predict the elastic constants of different lead chalcogenides [18].…”

Section: Introductionsmentioning

confidence: 99%

Tuning band gaps in lead chalcogenides under pressure: implications for infrared detection applications

Sohrabikia,

Abedi Ravan,

Jafari

2024

Phys. Scr.

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This study employs first-principle calculations within density functional theory (DFT) to explore the structural, electronic, optical, and thermoelectric properties of lead chalcogenides (PbS, PbSe, and PbTe). The investigation focuses on their potential application as infrared photodetectors, leveraging their narrow-band gap semiconductor characteristics. The influence of pressure on the band gap and various electronic, optical, and thermoelectric properties is thoroughly analyzed. The calculated band gap values for PbS, PbSe, and PbTe are determined to be 0.29 eV, 0.18 eV, and 0.18 eV, respectively, aligning well with experimental data. Notably, the study reveals non-linear changes in band gap values under pressure, with phase transitions observed at specific pressure thresholds in PbS and PbSe, but not in PbTe. Under varying pressure conditions, the optical peaks shift towards lower energy levels with increased intensity. The static dielectric constant of PbS, PbSe, and PbTe exhibits distinct variations within pressure ranges of 0-8 GPa. Transport coefficients (S, σ, ke) are calculated using semi-classical Boltzmann theory across different temperatures and pressures, indicating that heavier compounds exhibit higher electrical and thermal conductivity values. At 300 K, the maximum ZT values are determined to be 0.85, 0.8, and 0.52 for PbS, PbSe, and PbTe, respectively. The study suggests enhanced thermoelectric properties of these structures at lower temperatures, particularly highlighting PbS and PbSe as promising candidates for thermoelectric applications below 500 K. Exploring the impact of pressure on the thermoelectric parameters of lead chalcogenides reveals interesting trends, with PbTe demonstrating higher thermoelectric efficiency under increased pressure compared to PbS and PbSe. These findings provide valuable insights into the potential applications and performance of lead chalcogenides in IR detection and thermoelectric systems.

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Section: Introductionsmentioning

confidence: 99%

Tuning band gaps in lead chalcogenides under pressure: implications for infrared detection applications

Sohrabikia,

Abedi Ravan,

Jafari

2024

Phys. Scr.

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“…In addition to the above conventional WBSs, narrow band gap semiconductors have also been demonstrated to be potential photosensitive materials for the assembly of UVPDs. − From the perspective of material fabrication and optoelectronic properties, lead sulfide (PbS) shows outstanding advantages, including low cost, mature process, high optical absorption coefficient, and high carrier mobility. , Due to the narrow band gap of 0.41 eV, the bulk PbS-based PDs are sensitive to infrared (IR) light than UV light. − However, recent studies have shown that PbS nanocrystals exhibit photoelectric properties different from that of bulk PbS, such as broad spectral response from UV to near-infrared (NIR) and adjustable spectral selectivity. − Then, the blue shift of the spectral response peak of PbS could be achieved, indicating that it could be used for low-cost and sensitive UVPDs. , …”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Photodetectors Based on Nanometer-Thick Films of the Narrow Band Gap Semiconductor PbS

Wang

Lin

Luo

et al. 2022

ACS Appl. Nano Mater.

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Ultraviolet photodetectors (UVPDs) which play important roles in military and civil applications are normally fabricated by using wide band gap semiconductors (WBSs) as building blocks. Unfortunately, the commercialization of UVPDs based on WBSs is often limited by their relatively high fabrication cost owing to the use of very complicated growth instruments. In this work, a sensitive UVPD based on non-WBS lead sulfide (PbS) with a relatively small band gap was proposed. Device analysis revealed that the UVPD made of 48.5 nm PbS nanofilm was highly sensitive to UV illumination at 365 nm. Specifically, the responsivity and specific detectivity under 365 nm illumination were 22.25 A W–1 and 4.97 × 1012 Jones, respectively, which are comparable to or better than most of the conventional WBS-based UVPDs. The PbS nanofilm-based UVPD also exhibits excellent environmental stability. Experimental results and simulations based on technology computer-aided design software confirmed that the abnormal properties of PbS nanofilms are related to the relatively thin thickness and wavelength-dependent absorption coefficients. These results open up an opportunity for narrow band gap semiconductors to realize low-cost-sensitive UVPDs in future optoelectronic devices and systems.

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Visible light active SrZrO3/PbS nanocomposite for photoconversion of CO2 into methane and methanol

et al. 2022

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Lead sulfide; a new candidate for optoelectronics applications in the ultra violet spectral range

Cited by 11 publications

References 41 publications

Tuning band gaps in lead chalcogenides under pressure: implications for infrared detection applications

Tuning band gaps in lead chalcogenides under pressure: implications for infrared detection applications

Ultraviolet Photodetectors Based on Nanometer-Thick Films of the Narrow Band Gap Semiconductor PbS

Visible light active SrZrO3/PbS nanocomposite for photoconversion of CO2 into methane and methanol

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