Lead Sulfide Quantum Dots Mode Locked, Wavelength-Tunable Soliton Fiber Laser

Liao, Yun; Zhang, Hancheng; Cui, Han; Chen, Ding; Ding, Yiming; Yu, Kehan; Wei, Wei

doi:10.1109/lpt.2020.3045484

Cited by 6 publications

(2 citation statements)

References 38 publications

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“…The IV–VI group of narrow-band compound PbS has been successfully used in NIR photodetectors in the fields of lasers, sensors, and medicine due to its advantages of adjustable band gap, wide-band detection, and high optical absorption coefficient; thus, it is one of the most promising materials for near-infrared photodetectors at low cost at present . Up to date, PbS has been prepared using various methods, mainly including chemical bath deposition, chemical vapor deposition, microwave heating, and electrochemical atomic layer epitaxy .…”

Section: Introductionmentioning

confidence: 99%

Growth of Si/PbS Heterostructure Infrared Photodetectors for NIR Detection

Zhang,

Yang,

et al. 2024

ACS Photonics

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Lead sulfide (PbS), as an excellent narrow band gap material, has a wide range of applications in short-wave infrared detection. In this study, Si/PbS photodetectors are fabricated by an electrochemical deposition technique to grow PbS materials inside a patterned silicon window. The deposited PbS materials were characterized using SEM, TEM, and XRD. The PbS morphology and particle size were investigated by varying the electrochemical deposition time and precursor solution concentration ratio to assess the photoelectric properties. The results show that the size and thickness of the PbS material decrease with the increase of sulfur content, which also affects the photoelectric performance of the detector. When Pb: S = 1:1, the specific detectivity reaches its maximum value of 1.3 × 10 9 Jones. With the increase of the sulfur content, the responsivity and detectivity of the device decrease, but the response time is reduced. When Pb: S = 1:9, the response/recovery time is 0.25 s/0.23 s, while the dark current is as low as 1.58 × 10 −8 A. This method of optimizing the performance by modulating the size and thickness of the PbS material provides a novel approach for the development of Si/PbS heterostructure photodetectors.

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Section: Introductionmentioning

confidence: 99%

Growth of Si/PbS Heterostructure Infrared Photodetectors for NIR Detection

Zhang,

Yang,

et al. 2024

ACS Photonics

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“…These advantages present a promising outlook for low-cost, large-scale, high-resolution, and small-pixel IR detectors. Over the past decade, CQDs have found widespread applications in various fields, including solar cells [54][55][56], spectroscopy [57], phototransistors [58][59][60], focal plane array (FPA) imagers [61], lasers [62][63][64], and light-emitting diodes [65,66]. Among them, mercury chalcogenide CQDs, due to their large Bohr radius and wide tunable size range, theoretically cover the critical IR spectral bands, positioning them as ideal materials for IR detectors that have the potential for superior detection performance [67,68].…”

Section: Introductionmentioning

confidence: 99%

Mercury Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Hao,

Ma,

Xing

et al. 2023

Materials

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In recent years, mercury chalcogenide colloidal quantum dots (CQDs) have attracted widespread research interest due to their unique electronic structure and optical properties. Mercury chalcogenide CQDs demonstrate an exceptionally broad spectrum and tunable light response across the short-wave to long-wave infrared spectrum. Photodetectors based on mercury chalcogenide CQDs have attracted considerable attention due to their advantages, including solution processability, low manufacturing costs, and excellent compatibility with silicon substrates, which offers significant potential for applications in infrared detection and imaging. However, practical applications of mercury-chalcogenide-CQD-based photodetectors encounter several challenges, including material stability, morphology control, surface modification, and passivation issues. These challenges act as bottlenecks in further advancing the technology. This review article delves into three types of materials, providing detailed insights into the synthesis methods, control of physical properties, and device engineering aspects of mercury-chalcogenide-CQD-based infrared photodetectors. This systematic review aids researchers in gaining a better understanding of the current state of research and provides clear directions for future investigations.

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