Lead Sulphide - An Intrinsic Semiconductor

Putley, E.H.; Arthur, J B

doi:10.1088/0370-1301/64/7/110

Cited by 23 publications

(3 citation statements)

References 2 publications

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“…20 In case of PbS nanoparticles, the situation is complicated by their composite nature. Bulk PbS is an intrinsic semiconductor, 21 however, the ligand chemistry strongly influences the doping level through changing of the density of states. 22,23 This effect is irreversible in practice, as the preferred ligands for film formation bind strongly to the PbS surface changing eventually its chemical composition.…”

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confidence: 99%

Reducing charge trapping in PbS colloidal quantum dot solids

Balazs

Nugraha

Bisri

et al. 2014

Applied Physics Letters

106

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Understanding and improving charge transport in colloidal quantum dot solids is crucial for the development of efficient solar cells based on these materials. In this paper, we report high performance field-effect transistors based on lead-sulfide colloidal quantum dots (PbS CQDs) crosslinked with 3-mercaptopropionic acid (MPA). Electron mobility up to 0.03 cm2/Vs and on/off ratio above 105 was measured; the later value is the highest in the literature for CQD Field effect transistors with silicon-oxide gating. This was achieved by using high quality material and preventing trap generation during fabrication and measurement. We show that air exposure has a reversible p-type doping effect on the devices, and that intrinsically MPA is an n-type dopant for PbS CQDs.

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confidence: 99%

Reducing charge trapping in PbS colloidal quantum dot solids

Balazs

Nugraha

Bisri

et al. 2014

Applied Physics Letters

106

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“…[25,26] Here, we seek to expand our understanding of this bioinspired band gap tuning approach by studying the case of a semiconductor with a band gap in the near-infrared (NIR) range, namely, lead (II) sulfide (PbS). [27] Due to the fact that PbS crystals absorb light up to the NIR region, they appear black and exhibit a narrow band gap of 0.41 eV. [28,29] PbS is a material of great importance in a variety of applications related to infrared (IR) devices, such as IR detectors, [30][31][32] and as an electron transport layer in hybrid photovoltaics (PVs).…”

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confidence: 99%

Excessive Increase in the Optical Band Gap of Near‐Infrared Semiconductor Lead (II) Sulfide via the Incorporation of Amino Acids

Lang

Brif

Polishchuk

et al. 2022

Advanced Optical Materials

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Incorporation of organic molecules into the crystal lattice of biominerals is one of Nature's main strategies to modify the structure, morphology, and specific physical properties of the mineral host. Inspired by this biostrategy, it is shown that several semiconductors, whose band gaps are in the ultraviolet or visible absorption spectrum, can incorporate individual amino acids (AAs) into their crystalline structures. Interestingly, such incorporation is accompanied by an increase in the optical band gap of semiconductor hosts, resulting from an internal quantum confinement effect. In this work, this bioinspired route of band gap tuning is applied for the first time to a semiconductor with a near‐infrared (NIR) band gap. Indeed individual AAs are found to become incorporated into the crystalline structure of lead (II) sulfide (PbS). It is shown that this incorporation induces an expansion of the PbS unit cell as well as changes in the morphology. Moreover, an unprecedented increase of up to 40–50% in the optical band gap is observed in the case of cysteine and lysine incorporation.

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“…The first intentional infrared detector is the thermopile developed by Macedonio Melloni in 1835 [ 1 ]. One of the early semiconductor materials used as an infrared device was lead sulfide (PbS) [ 2 ]. After the second World War, the interest in infrared devices dramatically increased as it became clear that infrared could be used to obtain images of objects due to their heat emission.…”

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