Lead Zirconate‐Lead Titanate Piezoelectric Ceramics with Iron Oxide Additions

Weston, TA; Webster, A. H.; McNamara, V M

doi:10.1111/j.1151-2916.1969.tb09178.x

“…Near the MPB, additions of some þ 3 or þ 5 ions (La, Nd, Nb, and Ta) increase the dielectric constant and give the PZT better aging and stability characteristics [106]. Modifying PZT with tungsten and thorium gives results similar to those for PZT containing Nb or La [107].…”

Section: Batio 3 (Bt)supporting

confidence: 49%

Ceramics, Electronic

Blum¹,

Heimann²

2011

Ullmann's Encyclopedia of Industrial Chemistry

1

0

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The article contains sections titled: 1. Introduction 2. Theoretical Background 2.1. Dielectric Effects and Classification of Dielectrics 2.2. Characteristic Dielectric Parameters 3. Linear Dielectrics 3.1. Al 2 O 3 3.2. New Substrate Materials 3.3. Polymer–Ceramic Composites 4. Nonlinear Dielectrics 4.1. Physics of Ferro‐ and Piezoelectricity 4.2. BaTiO 3 (BT) 4.3. PbTiO 3 , PbZrO 3 , PbTiO 3 –PbZrO 3 4.3.1. Crystal Structures, Processing, and Properties 4.3.2. Applications 4.4. PLZT 4.5. Pb(Mg 1/3 Nb 2/3 )O 3 /Pb(Zn 1/3 Nb 2/3 )O 3 (PMN/PZN) 4.6. PbNb 2 O 6 4.7. LiNbO 3 , LiTaO 3 4.8. Lead‐Free Perovskites 4.9. Calcium Gallium Germanate (CGG) Compounds 4.10. Other Materials 5. Semiconducting Ceramics 5.1. SiC 5.1.1. Structure and Properties 5.1.2. Single‐Crystal Growth 5.1.3. Doping and Device Fabrication 5.1.4. Applications 5.2. TiO 2 6. Superconducting Ceramics 7. Sensor Materials 7.1. Oxide‐Based Sensors 7.2. Ferroic, Smart, and Intelligent Sensors

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“…The piezoelectric properties were measured in a whole composition range from 0.20L-0.24N (corresponding to 0.1 wt% La 2 O 3 and 0.1 wt% Nb 2 O 5 ) to 1.8L-2.2N (0.9 wt% The values are lower than those (kp ∼ 0.5, Qm ∼ 400) of pure PZT ceramics reported elsewhere [1,2,12], which could be due to the poorly densified specimen sintered at relatively lower temperature (1150 • C) for the undoped PZT. Dielectric constant (ε r ) at room temperature and loss factor (tanδ) at 1 kHz for the doped samples are presented in Fig.…”

Section: Effect Of Complex La and Nb Dopantsmentioning

confidence: 99%

“…Both A +2 and B +4 site ions can be substituted with different dopants. Higher valence dopants like La +3 [3][4][5][6] and Nb +5 [3,[7][8][9] contribute electrons, being thus a donor, substitute the A and B site, respectively, and may create A vacancies [2,6,7], while lower valence ones like Na + [2,10] and Fe +3 [10][11][12], acting as an acceptor, could enter the A and B site, respectively, and create some O vacancies [2,12].…”

Section: Introductionmentioning

confidence: 99%

Effects of complex doping on microstructural and electrical properties of PZT ceramics

Lee

¹

,

Lee

²

2006

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The influence of complex dopants including donor and acceptor ions on microstructure and electrical properties of PZT (Zr/Ti = 53/47) ceramics was investigated. The prepared PZT ceramics modified with complex soft dopants, La +3 and Nb +5 , showed that the piezoelectric properties were enhanced and stable with the compositional variations, which made it possible to establish the higher reliability and reproducibility of the piezoelectric performances. For 1.0 mol% La and 1.2 mol% Nb doped composition, the maximum value, k P = 0.66, was obtained. Unlike single element doping, the complex doping of both the donor and acceptor ions caused various compensation effects for the piezoelectric properties of the PZT ceramics. The improved piezoelectric properties, i.e., enhanced Q m with remaining higher k p , were obtained in the PZT composition complexly doped with La +3 and Fe +3 . For 1.0 mol% La and 2.0 mol% Fe doped PZT composition, relatively high Q m and k p values of 580 and 0.53, respectively, were obtained. It was also shown that the PZT composition had the rather lowered dielectric constant, ε r = 800, and considerably low loss, tanδ = 0.003. By changing the dopants compositions, the properties can also be tailored over wider range.

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“…These results agree with previous reports on acceptor doped BST thin films. Generally, Mn 3+ , Ni 2+ , Ni 3+ , and Mg 2+ , which can occupy the B site of the A 2+ B 4+ O 2− 3 perovskite structure, have been known to lower the dielectric loss [8][9][10]. On the basis of the similar ionic radii between Ti 4+ (r eff = 0.61 A) and Ni 2+ (r eff = 0.69 A) in sixfold coordination, we can assume that Ni occupies Ti in the BST lattice with doubly ionized oxygen vacancy is simultaneously formed.…”

Section: Resultsmentioning

confidence: 99%

Frequency and Voltage Dependent Dielectric Properties of Ni-doped Ba0.6Sr0.4TiO3 Thin Films

Lim

¹

,

Kim

²

,

Kim

³

et al. 2004

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Highly (100) preferred undoped and 1-5% Ni-doped Ba 1−x Sr x TiO 3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750 • C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.

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Lead Zirconate‐Lead Titanate Piezoelectric Ceramics with Iron Oxide Additions

Cited by 136 publications

References 4 publications

Ceramics, Electronic

Ceramics, Electronic

Effects of complex doping on microstructural and electrical properties of PZT ceramics

Frequency and Voltage Dependent Dielectric Properties of Ni-doped Ba0.6Sr0.4TiO3 Thin Films

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