Leading electroweak radiative corrections tot→W++b

Peculiar distribution of Pd on Au nanoclusters: First-principles studies

“…Pd atoms were found to form second neighborhoods on Au͑001͒ and Au͑111͒ surfaces, and appropriate distances between adjacent Pd atoms were assigned as a prime factor for the extremely high reactivity and selectivity of PdAu͑001͒ toward VA synthesis. [5][6][7][8] Nevertheless, Pd distribution on small Au facets may not adopt the same mode because of the size reduction. To control the chemical properties of innovative nanocatalysts, it is important to determine the preferential distribution pattern of Pd on PdAu bimetallic nanoparticles.…”

Optical spectrum of a two-dimensional hole gas in the presence of spin-orbit interaction

“…As pointed out recently by Rashba, 7 dynamical and optical features of the spintronic systems can play an important role in spin dynamics and spin transport. In fact, the results obtained from recent theoretical work have indicated that [8][9][10] ͑i͒ the 2DEG-and 2DHG-based Rashba spintronic systems can be used not only as electronic devices but also as optical devices working at terahertz ͑10 12 Hz or THz͒ or sub-THz bandwidths; ͑ii͒ due to the opening up of new channels for electronic transition accompanied by optical absorption and excitation, some unique optical properties can be observed in such systems; and ͑iii͒ the Rashba type of spin splitting can be identified via optical experiments instead of magnetotransport measurements. Hence, the topic dealing with optical properties of the Rashba spintronic systems is very rich in terms of basic physics and in device applications.…”

“…9 Thus, similar to the case of a 2DEG, 10 the two edges of the optical spectrum for a spin-split 2DHG are, respectively, at ⍀ ϳ ± =2␤͑4 n ± ͒ 3/2 / ប. Using Eq.…”

“…10 In the present study we limit ourselves to the study of p-doped Al x Ga 1−x As/ GaAs-based spintronic systems. The heavy hole effective mass in GaAs is taken as m * = 0.45m e with m e being the electron rest mass.…”

“…10 From a theoretical point of view, the basic difference between an In x Ga 1−x As-based 2DEG and a GaAs-based 2DHG is the nature of the SOI via the Rashba spin splitting, which leads to different wave functions and energy spectra. In particular, in contrast to a linear-in-k dependence of the energy separation between two spin branches in a spin-split 2DEG, the Rashba effect on a 2DHG results in a cubic-in-k term of the hole energy spectrum.…”